SI4464DY-T1-E3 Vishay, SI4464DY-T1-E3 Datasheet

MOSFET N-CH 200V 1.7A 8-SOIC

SI4464DY-T1-E3

Manufacturer Part Number
SI4464DY-T1-E3
Description
MOSFET N-CH 200V 1.7A 8-SOIC
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI4464DY-T1-E3

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
240 mOhm @ 2.2A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
1.7A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
18nC @ 10V
Power - Max
1.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Resistance Drain-source Rds (on)
0.24 Ohm @ 10 V
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
1.7 A
Power Dissipation
1500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
1.7A
Drain Source Voltage Vds
200V
On Resistance Rds(on)
195mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
2V
Power Dissipation Pd
2.5W
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI4464DY-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4464DY-T1-E3
Manufacturer:
ADI
Quantity:
160
Part Number:
SI4464DY-T1-E3
Manufacturer:
VISHAY
Quantity:
10 000
Part Number:
SI4464DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 72051
S09-0705-Rev. C, 27-Apr-09
PRODUCT SUMMARY
Ordering Information:
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Single Avalanch Current
Single Avalanch Energy
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
DS
200
(V)
G
S
S
S
0.260 at V
1
2
3
4
0.240 at V
Si4464DY-T1-E3 (Lead (Pb)-free)
Si4464DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
R
DS(on)
Top View
SO-8
J
a
= 150 °C)
GS
a
GS
(Ω)
= 6.0 V
= 10 V
N-Channel 200-V (D-S) MOSFET
a
8
7
6
5
D
D
D
D
a
A
I
= 25 °C, unless otherwise noted
D
2.2
2.1
Steady State
Steady State
L = 0.1 mH
(A)
T
T
T
T
A
A
A
A
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• PWM Optimized for Low Q
• Compliant to RoHS Directive 2002/95/EC
• Primary Side Switch
Symbol
Symbol
T
R
R
G
J
Definition
V
V
E
I
I
P
, T
I
DM
thJA
thJF
AS
I
DS
GS
AS
D
S
D
N-Channel MOSFET
stg
D
S
®
Power MOSFET
Typical
10 s
2.2
1.7
2.1
2.5
1.6
37
68
17
- 55 to 150
± 20
0.45
200
8
3
g
Steady State
Maximum
and Low R
1.7
1.3
1.2
1.5
0.9
50
85
21
Vishay Siliconix
Si4464DY
g
www.vishay.com
°C/W
Unit
Unit
mJ
°C
W
V
A
A
1

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SI4464DY-T1-E3 Summary of contents

Page 1

... SO Top View Ordering Information: Si4464DY-T1-E3 (Lead (Pb)-free) Si4464DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Single Avalanch Current Single Avalanch Energy Continuous Source Current (Diode Conduction) a Maximum Power Dissipation ...

Page 2

... Si4464DY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance ...

Page 3

... Gate Charge 150 ° 0.1 0.0 0.2 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 72051 S09-0705-Rev. C, 27-Apr- °C J 0.6 0.8 1.0 Si4464DY Vishay Siliconix 800 C iss 600 400 200 C rss C oss Drain-to-Source V oltage (V) DS Capacitance 2 2 2.0 1.5 1.0 ...

Page 4

... Si4464DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.8 0.4 0.0 - 0.4 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 250 µ 100 125 150 Limited (DS) D(on) Limited 1 0 °C A Single Pulse ...

Page 5

... Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72051. Document Number: 72051 S09-0705-Rev. C, 27-Apr- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si4464DY Vishay Siliconix - www.vishay.com 10 5 ...

Page 6

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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