SI4464DY Vishay, SI4464DY Datasheet
SI4464DY
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SI4464DY Summary of contents
Page 1
... 25_C 70_C Symbol sec R thJA Steady State Steady State R thJF Si4464DY Vishay Siliconix FEATURES D TrenchFETr Power MOSFET D PWM Optimized for (Lowest Q APPLICATIONS D Primary Side Switch N-Channel MOSFET 10 secs Steady State 200 "20 2.2 1.7 1.7 1 0.45 2.1 1.2 2 ...
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... Si4464DY Vishay Siliconix SPECIFICATIONS (T J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time ...
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... V - Source-to-Drain Voltage (V) SD Document Number: 72051 S-22099—Rev. A, 02-Dec-02 New Product 25_C J 0.6 0.8 1.0 Si4464DY Vishay Siliconix Capacitance 800 C iss 600 400 200 C rss C oss Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 2 ...
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... Si4464DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.8 0.4 0.0 -0.4 -0.8 -1.2 -50 - Temperature (_C Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 New Product = 250 100 125 150 r Limited DS(on) Safe Operating Area 10 I D(on) Limited 1 0 25_C A Single Pulse 0.01 BV Limited DSS 0 ...
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... TYPICAL CHARACTERISTICS (25_C UNLESS NOTED Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Document Number: 72051 S-22099—Rev. A, 02-Dec-02 New Product Normalized Thermal Transient Impedance, Junction-to-Foot - Square Wave Pulse Duration (sec) Si4464DY Vishay Siliconix - www.vishay.com 10 5 Datasheet pdf - http://www.DataSheet4U.net/ ...