SI4464DY-T1-GE3 Vishay
SI4464DY-T1-GE3
Manufacturer Part Number
SI4464DY-T1-GE3
Description
N-CHANNEL 200-V (D-S) MOSFET
Manufacturer
Vishay
Series
TrenchFET®r
Specifications of SI4464DY-T1-GE3
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
240 mOhm @ 2.2A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
1.7A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
18nC @ 10V
Power - Max
1.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI4464DY-T1-GE3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4464DY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000