STD3NK50ZT4 STMicroelectronics, STD3NK50ZT4 Datasheet - Page 5

• Manufacturer Part Number: STD3NK50ZT4
• Description: MOSFET N-CH 500V 2.3A DPAK
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STD3NK50ZT4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.3 Ohm @ 1.15A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 2.3A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Input Capacitance (ciss) @ Vds: 280pF @ 25V
• Power - Max: 45W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.8 Ohms
• Forward Transconductance Gfs (max / Min): 1.5 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 2.3 A
• Power Dissipation: 45 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 497-4333-2

Figure 9: Transconductance
Figure 10: Gate Charge vs Gate-source Voltage
Figure 11: Static Drain-Source On Resistance
STD3NK50Z - STD3NK50Z-1 - STQ3NK50ZR-AP
Figure 12: Capacitance Variations
Figure 13: Normalized Gate Threshold Voltage
vs Temperature
Figure 14: Source-Drain Forward Characteris-
tics
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