STD3NK50ZT4 STMicroelectronics, STD3NK50ZT4 Datasheet - Page 2

• Manufacturer Part Number: STD3NK50ZT4
• Description: MOSFET N-CH 500V 2.3A DPAK
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STD3NK50ZT4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.3 Ohm @ 1.15A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 2.3A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Input Capacitance (ciss) @ Vds: 280pF @ 25V
• Power - Max: 45W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.8 Ohms
• Forward Transconductance Gfs (max / Min): 1.5 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 2.3 A
• Power Dissipation: 45 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 497-4333-2

STD3NK50Z - STD3NK50Z-1 - STQ3NK50ZR-AP
2/14
Table 3: Absolute Maximum ratings
( ) Pulse width limited by safe operating area
(1)
Table 4: Thermal Data
(#) When mounted on 1inch² FR4, 2 Oz copper board.
Table 5: Avalanche Characteristics
Table 6: GATE-SOURCE ZENER DIODE
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in-back-to-back Zener diodes have specifically been designed to enchance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
V
Rthj-case
Rthj-amb
Rthj-lead
I
dv/dt (1)
Symbol
Symbol
Symbol
D
BV
ESD(G-S)
I
V
DM
P
V
V
E
T
I
DGR
TOT
AR
I
I
T
T
stg
DS
GS
AS
GSO
D
D
2 di/dt 200A/µs, V
l
j
( )
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
(starting T
Drain-source Voltage (V
Drain-gate Voltage (R
Gate- source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Gate source ESD (HBM-C=100 pF, R= 1.5K
Peak Diode Recovery voltage slope
Operating Junction Temperature
Storage Temperature
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Junction-lead Max
Maximum Lead Temperature For Soldering Purpose
Gate-Source Breakdown
Voltage
Parameter
DD
j
= 25 °C, I
V
(BR)DSS
D
C
GS
Parameter
Parameter
= I
= 25°C
GS
j
= 20 k )
max)
AR
= 0)
, V
Igs=± 1mA (Open Drain)
DD
C
C
= 25°C
= 100°C
Test Conditions
= 50 V)
DPAK
50 (#)
DPAK/IPAK
Min.
30
--
1.45
0.36
2.3
9.2
45
2.77
275
Max. Value
-55 to 150
IPAK
Value
100
2000
Typ.
500
500
±30
120
4.5
--
2.3
TO-92
0.025
0.32
0.5
TO-92
2
3
Max.
120
260
40
--
W/°C
°C/W
°C/W
°C/W
V/ns
Unit
Unit
Unit
Unit
mJ
°C
°C
W
V
V
V
A
A
A
V
A
V