SI7465DP-T1-E3 Vishay, SI7465DP-T1-E3 Datasheet - Page 6

• Manufacturer Part Number: SI7465DP-T1-E3
• Description: MOSFET P-CH 60V 3.2A PPAK 8SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r
• Type: Power MOSFETr

Specifications of SI7465DP-T1-E3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 64 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 3.2A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 40nC @ 10V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SO-8
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.064 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3.2 A
• Power Dissipation: 1500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -5A
• Drain Source Voltage Vds: -60V
• On Resistance Rds(on): 80mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: -3V
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.064Ohm
• Drain-source On-volt: 60V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: PowerPAK SO
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI7465DP-T1-E3TR

PowerPAK
Document Number: 71655
Revison: 15-Feb-10
ECN: T10-0055-Rev. J, 15-Feb-10
DWG: 5881
DIM.
A1
D1
D2
D3
D4
D5
E1
E2
E3
K1
L1
E4
W
M
D
H
A
b
c
E
e
K
L
θ
®
SO-8, (SINGLE/DUAL)
1
2
3
4
Notes
1.
2
3.
MIN.
0.97
0.00
0.33
0.23
5.05
4.80
3.56
1.32
6.05
5.79
3.48
3.68
0.56
0.51
0.51
0.06
0.15
Inch will govern.
Dimensions exclusive of mold gate burrs.
Dimensions exclusive of mold flash and cutting burrs.
0°
W
E1
2
E
MILLIMETERS
0.125 TYP.
0.57 TYP.
3.98 TYP.
0.75 TYP.
1.27 BSC
1.27 TYP.
NOM.
1.04
0.41
0.28
5.15
4.90
3.76
1.50
6.15
5.89
3.66
3.78
0.61
0.61
0.13
0.25
-
-
-
L1
Detail Z
Z
MAX.
1.12
0.05
0.51
0.33
5.26
5.00
3.91
1.68
6.25
5.99
3.84
3.91
0.71
0.71
0.20
0.36
A1
12°
-
0.038
0.000
0.013
0.009
0.199
0.189
0.140
0.052
0.238
0.228
0.137
0.145
0.022
0.020
0.020
0.002
0.006
MIN.
Backside View of Single Pad
0°
Backside View of Dual Pad
H
H
Package Information
E3
E3
D1
D2
D
E2
E2
0.0225 TYP.
0.157 TYP.
0.030 TYP.
0.050 TYP.
0.005 TYP.
0.050 BSC
E4
E4
INCHES
NOM.
0.041
0.016
0.011
0.203
0.193
0.148
0.059
0.242
0.232
0.144
0.149
0.024
0.024
0.005
0.010
-
-
-
K
K
Vishay Siliconix
L
L
1
2
3
4
1
2
3
4
www.vishay.com
MAX.
0.044
0.002
0.020
0.013
0.207
0.197
0.154
0.066
0.246
0.236
0.151
0.154
0.028
0.028
0.008
0.014
12°
-
1