ECH8402-TL-E SANYO, ECH8402-TL-E Datasheet - Page 3

• Manufacturer Part Number: ECH8402-TL-E
• Description: MOSFET N-CH 30V 10A ECH8
• Manufacturer: SANYO

Specifications of ECH8402-TL-E

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 15 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 10A
• Gate Charge (qg) @ Vgs: 28nC @ 10V
• Input Capacitance (ciss) @ Vds: 1400pF @ 10V
• Power - Max: 1.6W
• Mounting Type: Surface Mount
• Package / Case: 8-ECH
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -
• Other names: 869-1154-2

100
1.0
10
10
50
45
40
35
30
25
20
15
10
10
3
2
7
5
3
2
7
5
3
5
0
7
5
3
2
7
5
3
2
7
9
8
7
6
5
4
3
2
1
0
0.1
0.1
0
0
V DS =10V
I D =5A
I D =2.5A
2
2
2
5
3
3
Gate-to-Source Voltage, V GS -- V
5.0A
4
Total Gate Charge, Qg -- nC
5
5
R DS (on) -- V GS
Drain Current, I D -- A
Drain Current, I D -- A
10
SW Time -- I D
7
7
V GS -- Qg
6
1.0
1.0
y
fs -- I D
15
8
2
2
3
3
10
20
5
5
12
7
7
10
10
V DD =15V
V GS =10V
V DS =10V
25
Ta=25 C
14
IT08486
IT08488
IT08484
IT08490
2
2
ECH8402
16
30
3
3
0.001
1000
0.01
0.01
100
100
1.0
0.1
1.0
0.1
10
10
35
30
25
20
15
10
40
5
0
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
0.01
--50
0.2
0
Ta=25 C
Single pulse
Mounted on a ceramic board (900mm
2 3
0.3
--25
Operation in this
area is limited by R DS (on).
5
5 7
Ciss, Coss, Crss -- V DS
Drain-to-Source Voltage, V DS -- V
Drain-to-Source Voltage, V DS -- V
Diode Forward Voltage, V SD -- V
0.4
Ambient Temperature, Ta -- C
0
0.1
0.5
10
R DS (on) -- Ta
2 3
25
I F -- V SD
0.6
A S O
5 7
Ciss
50
15
1.0
0.7
75
2 3
0.8
20
2
100
0.8mm)
5
0.9
7
No.8148-3/4
10
10 s
25
f=1MHz
V GS =0
125
1.0
2
IT08485
IT08487
IT08489
IT08491
3
150
1.1
30
5