ECH8402-TL-E SANYO, ECH8402-TL-E Datasheet - Page 2

• Manufacturer Part Number: ECH8402-TL-E
• Description: MOSFET N-CH 30V 10A ECH8
• Manufacturer: SANYO

Specifications of ECH8402-TL-E

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 15 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 10A
• Gate Charge (qg) @ Vgs: 28nC @ 10V
• Input Capacitance (ciss) @ Vds: 1400pF @ 10V
• Power - Max: 1.6W
• Mounting Type: Surface Mount
• Package / Case: 8-ECH
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -
• Other names: 869-1154-2

Continued from preceding page.
Package Dimensions
unit : mm
2222A
Switching Time Test Circuit
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
P.G
10
1
10V
8
6
4
2
0
8
0V
0.65
0
PW=10 s
D.C. 1%
0.3
2.9
V IN
0.1
Parameter
0.2
4
5
Drain-to-Source Voltage, V DS -- V
V IN
G
50
0.3
I D -- V DS
0.4
V DD =15V
D
0.5
S
I D =5A
R L =3
1 : Source
2 : Source
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain
SANYO : ECH8
0.6
ECH8402
0.15
Symbol
0.7
V SD
V OUT
Qgs
Qgd
Qg
0.8
V DS =10V, V GS =10V, I D =5A
V DS =10V, V GS =10V, I D =5A
V DS =10V, V GS =10V, I D =5A
I S =10A, V GS =0
0.9
IT08482
1.0
ECH8402
Conditions
16
14
12
10
Electrical Connection
8
6
4
2
0
0
V DS =10V
0.5
8
1
1.0
Gate-to-Source Voltage, V GS -- V
1.5
7
2
min
I D -- V GS
2.0
6
3
2.5
Ratings
typ
0.81
3.0
4.8
7.3
5
4
28
3.5
max
Top view
1 : Source
2 : Source
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain
4.0
1.2
No.8148-2/4
4.5
IT08483
Unit
nC
nC
nC
V
5.0