MTD6N20ET4G ON Semiconductor, MTD6N20ET4G Datasheet - Page 7

• Manufacturer Part Number: MTD6N20ET4G
• Description: MOSFET N-CH 200V 6A DPAK
• Manufacturer: ON Semiconductor

Specifications of MTD6N20ET4G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 700 mOhm @ 3A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 21nC @ 10V
• Input Capacitance (ciss) @ Vds: 480pF @ 25V
• Power - Max: 1.75W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.7 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 1.5 S
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6 A
• Power Dissipation: 50000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MTD6N20ET4GOS; MTD6N20ET4GOS; MTD6N20ET4GOSTR

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
ORDERING INFORMATION
MTD6N20ET4G
MTD6N20ET5G
Specifications Brochure, BRD8011/D.
Device
http://onsemi.com
7
(Pb−Free)
(Pb−Free)
Package
DPAK
DPAK
2500 Tape & Reel
2500 Tape & Reel
Shipping
†