MTD6N20ET4G ON Semiconductor, MTD6N20ET4G Datasheet - Page 5

• Manufacturer Part Number: MTD6N20ET4G
• Description: MOSFET N-CH 200V 6A DPAK
• Manufacturer: ON Semiconductor

Specifications of MTD6N20ET4G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 700 mOhm @ 3A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 21nC @ 10V
• Input Capacitance (ciss) @ Vds: 480pF @ 25V
• Power - Max: 1.75W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.7 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 1.5 S
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6 A
• Power Dissipation: 50000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MTD6N20ET4GOS; MTD6N20ET4GOS; MTD6N20ET4GOSTR

maximum simultaneous drain−to−source voltage and drain
current that a transistor can handle safely when it is forward
biased. Curves are based upon maximum peak junction
temperature and a case temperature (T
repetitive pulsed power limits are determined by using the
thermal response data in conjunction with the procedures
discussed in AN569, “Transient Thermal Resistance−General
Data and Its Use.”
traverse any load line provided neither rated peak current
(I
transition time (t
power averaged over a complete switching cycle must not
exceed (T
in switching circuits with unclamped inductive loads. For
DM
The Forward Biased Safe Operating Area curves define the
Switching between the off−state and the on−state may
A Power MOSFET designated E−FET can be safely used
12
10
8
6
4
2
0
) nor rated voltage (V
0
Figure 8. Gate−To−Source and Drain−To−Source
J(MAX)
Q
1
2
Q
r
3
Voltage versus Total Charge
,t
− T
f
) do not exceed 10 ms. In addition the total
4
C
Q
)/(R
T
, TOTAL CHARGE (nC)
qJC
6
Q
).
2
DSS
Q
T
DRAIN−TO−SOURCE DIODE CHARACTERISTICS
) is exceeded and the
8
6
5
4
3
2
1
0
0.5
Figure 10. Diode Forward Voltage versus Current
C
V
T
) of 25°C. Peak
10
J
GS
V
= 25°C
DS
V
= 0 V
GS
SAFE OPERATING AREA
V
SD
0.6
I
T
D
12
J
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
= 6 A
= 25°C
http://onsemi.com
14
90
75
60
45
30
15
0
0.7
5
reliable operation, the stored energy from circuit inductance
dissipated in the transistor while in avalanche must be less
than the rated limit and adjusted for operating conditions
differing from those specified. Although industry practice is
to rate in terms of energy, avalanche energy capability is not
a constant. The energy rating decreases non−linearly with an
increase of peak current in avalanche and peak junction
temperature.
drain−to−source avalanche at currents up to rated pulsed
current (I
continuous current (I
custom. The energy rating must be derated for temperature
as shown in the accompanying graph (Figure 12). Maximum
energy at currents below rated continuous I
assumed to equal the values indicated.
1000
100
Although many E−FETs can withstand the stress of
10
1
0.8
1
V
I
V
T
D
J
DD
GS
= 6 A
= 25°C
DM
= 100 V
= 10 V
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
), the energy rating is specified at rated
0.9
t
t
d(on)
d(off)
R
G
t
r
, GATE RESISTANCE (OHMS)
D
1.0
), in accordance with industry
10
t
f
D
can safely be
100