MTD6N20ET4G ON Semiconductor, MTD6N20ET4G Datasheet

MTD6N20ET4G

Manufacturer Part Number

MTD6N20ET4G

Description

MOSFET N-CH 200V 6A DPAK

Manufacturer

ON Semiconductor

Datasheet

1.MTD6N20ET4G.pdf (9 pages)

Specifications of MTD6N20ET4G

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

700 mOhm @ 3A, 10V

Drain To Source Voltage (vdss)

200V

Current - Continuous Drain (id) @ 25° C

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

21nC @ 10V

Input Capacitance (ciss) @ Vds

480pF @ 25V

Power - Max

1.75W

Mounting Type

Surface Mount

Package / Case

DPak, TO-252 (2 leads+tab), SC-63

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.7 Ohm @ 10 V

Forward Transconductance Gfs (max / Min)

1.5 S

Drain-source Breakdown Voltage

200 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

6 A

Power Dissipation

50000 mW

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

MTD6N20ET4GOS
MTD6N20ET4GOS
MTD6N20ET4GOSTR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MTD6N20ET4G

Quantity:

2 500

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MTD6N20ET4G

Manufacturer:

Quantity:

12 500

Company:

BOSTOCK HK LIMITED

Part Number:

MTD6N20ET4G

Manufacturer:

Company:

H&T Electronics

Part Number:

MTD6N20ET4G

Quantity:

2 500

Current page: 1 of 9
Download datasheet (130Kb)

MTD6N20E

Power MOSFET

6 A, 200 V, N−Channel DPAK

energy in the avalanche and commutation modes. The new energy

efficient design also offers a drain−to−source diode with a fast

recovery time. Designed for low voltage, high speed switching

applications in power supplies, converters and PWM motor controls,

these devices are particularly well suited for bridge circuits where

diode speed and commutating safe operating areas are critical and

offer additional safety margin against unexpected voltage transients.

Features

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. When surface mounted to an FR4 board using the minimum recommended

2. When surface mounted to an FR4 board using the 0.5 sq. in. drain pad size.

*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting

October, 2010 − Rev. 5

MAXIMUM RATINGS

Techniques Reference Manual, SOLDERRM/D.

Drain−to−Source Voltage

Drain−to−Gate Voltage (R

Gate−to−Source Voltage

Drain Current

Total Power Dissipation

Total Power Dissipation @ T

Operating and Storage Temperature Range

Single Pulse Drain−to−Source Avalanche

Thermal Resistance − Junction−to−Case

Maximum Temperature for Soldering

This advanced Power MOSFET is designed to withstand high

Discrete Fast Recovery Diode

Avalanche Energy Specified

Source−to−Drain Diode Recovery Time Comparable to a

Diode is Characterized for Use in Bridge Circuits

These Devices are Pb−Free and are RoHS Compliant

pad size.

DSS

− Continuous

− Non−repetitive (t

− Continuous

− Continuous @ 100°C

− Single Pulse (t

Derate above 25°C

Energy − Starting T

− Junction−to−Ambient (Note 1)

− Junction−to−Ambient (Note 2)

Purposes, 1/8″ from case for 10 secs

= 6.0 Apk, L = 3.0 mH, R

and V

= 80 Vdc, V

DS(on)

Rating

≤ 10 ms)

Specified at Elevated Temperature

≤ 10 ms)

= 10 Vdc,

= 25°C

= 25°C unless otherwise noted)

= 1.0 MW)

= 25°C (Note 2)

= 25 W)

Symbol

GSM

DGR

, T

DSS

qJC

qJA

stg

−55 to

Value

± 20

± 40

1.75

2.50

71.4

200

150

100

260

6.0

3.8

0.4

W/°C

°C/W

Unit

Vdc

Vpk

Adc

Apk

°C

See detailed ordering and shipping information in the package

dimensions section on page 7 of this data sheet.

1 2

6 AMPERES, 200 VOLTS

ORDERING INFORMATION

6N20E Device Code

DS(on)

http://onsemi.com

CASE 369C

CASE 369D

STYLE 2

= Year

= Work Week

= Pb−Free Package

DPAK

N−Channel

= 460 mW

Publication Order Number:

Gate

DIAGRAMS

MARKING

4 Drain

Drain

MTD6N20E/D

Source

Related parts for MTD6N20ET4G

MTD6N20ET4G Summary of contents

Page 1

... When surface mounted to an FR4 board using the 0.5 sq. in. drain pad size. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2010 October, 2010 − ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−Source Breakdown Voltage ( Vdc 0.25 mAdc Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (V = 200 Vdc Vdc 200 Vdc, ...

Page 3

TYPICAL ELECTRICAL CHARACTERISTICS 25° DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS Figure 1. On−Region Characteristics 1 ...

Page 4

Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals (Dt) are determined by how fast the FET input capacitance can be charged by current from the ...

Page 5

TOTAL CHARGE (nC) T Figure 8. Gate−To−Source and Drain−To−Source Voltage versus Total Charge DRAIN−TO−SOURCE DIODE CHARACTERISTICS The Forward ...

Page 6

SINGLE PULSE T = 25° 1.0 R LIMIT DS(on) THERMAL LIMIT PACKAGE LIMIT 0.1 0.1 1 DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS Figure 11. Maximum Rated Forward Biased Safe Operating Area ...

Page 7

... ORDERING INFORMATION Device MTD6N20ET4G MTD6N20ET5G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Package DPAK (Pb−Free) DPAK (Pb−Free) http://onsemi.com 7 † Shipping 2500 Tape & Reel 2500 Tape & Reel ...

Page 8

... DETAIL 0.005 (0.13 5.80 0.228 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C−01 ISSUE GAUGE L2 SEATING C PLANE PLANE DETAIL A ROTATED 90 CW ...

Page 9

... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...

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