SI1304BDL-T1-E3 Vishay, SI1304BDL-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI1304BDL-T1-E3
• Description: MOSFET N-CH 30V 900MA SOT323-3
• Manufacturer: Vishay
• Series: TrenchFET®r
• Type: Power MOSFETr

Specifications of SI1304BDL-T1-E3

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 270 mOhm @ 900mA, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 900mA
• Vgs(th) (max) @ Id: 1.3V @ 250µA
• Gate Charge (qg) @ Vgs: 2.7nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 100pF @ 15V
• Power - Max: 370mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-3, SOT-323-3
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 0.85 A
• Power Dissipation: 340 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 900mA
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 385mohm
• Rds(on) Test Voltage Vgs: 12V
• Threshold Voltage Vgs Typ: 1.3V
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.27Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±12V
• Drain Current (max): 850mA
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SC-70
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI1304BDL-T1-E3TR

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Si1304BDL
Vishay Siliconix
10.0
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.0
1.0
0.1
0.3
–50
–25
Forward Diode Voltage vs. Temp
V
SD
0
– Source-to-Drain Voltage (V)
Threshold Voltage
T
0.6
J
– Temperature (_C)
25
T
J
I
D
= 150_C
= 250 mA
50
75
0.9
100
T
J
0.001
= 25_C
_
0.01
0.1
10
125
1
0.1
*Limited by r
*V
150
1.2
GS
Single Pulse
New Product
T
A
u minimum V
V
= 25_C
DS
1
BV
DS(on)
– Drain-to-Source Voltage (V)
Safe Operating Area
DSS
Limited
GS
10
at which r
0.800
0.600
0.400
0.200
0.000
DS(on)
20
16
12
8
4
0
1 ms
10 ms
100 ms
1 s
dc
10 s
10
0
100
–3
is specified
Single Pulse Power, Junction-to-Ambient
10
r
DS(on)
V
–2
1
GS
1000
– Gate-to-Source Voltage (V)
10
vs VGS vs Temperature
–1
2
Time (sec)
T
A
1
= 25_C
T
S–52057—Rev. B, 03–Oct–05
T
A
A
= 25_C
Document Number: 73480
3
= 125_C
10
I
D
4
= 0.9 A
100
600
5