SI1304BDL-T1-E3 Vishay, SI1304BDL-T1-E3 Datasheet - Page 2

• Manufacturer Part Number: SI1304BDL-T1-E3
• Description: MOSFET N-CH 30V 900MA SOT323-3
• Manufacturer: Vishay
• Series: TrenchFET®r
• Type: Power MOSFETr

Specifications of SI1304BDL-T1-E3

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 270 mOhm @ 900mA, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 900mA
• Vgs(th) (max) @ Id: 1.3V @ 250µA
• Gate Charge (qg) @ Vgs: 2.7nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 100pF @ 15V
• Power - Max: 370mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-3, SOT-323-3
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 0.85 A
• Power Dissipation: 340 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 900mA
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 385mohm
• Rds(on) Test Voltage Vgs: 12V
• Threshold Voltage Vgs Typ: 1.3V
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.27Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±12V
• Drain Current (max): 850mA
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SC-70
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI1304BDL-T1-E3TR

Notes
a.
b.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Si1304BDL
Vishay Siliconix
Static
Drain-Source Breakdown Voltage
V
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
DS
GS(th)
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
Temperature Coefficient
Temperature Coefficient
b
Parameter
a
a
a
a
a
_
DV
Symbol
DV
V
r
r
GS(th)
I
DS(on)
DS(on)
t
t
I
C
I
I
C
V
GS(th)
D(on)
C
Q
Q
d(on)
V
d(off)
I
GSS
DSS
Q
g
Q
Q
R
DS
I
SM
t
t
t
DS
oss
t
t
SD
iss
rss
gd
S
rr
a
b
fs
gs
r
f
rr
g
g
/T
/T
J
J
New Product
I
I
F
I
D
= 0.28 A, di/dt = 100 A/ms, T
V
V
V
V
^ 0.68 A, V
DS
DS
DS
DS
0 28 A di/dt
V
= 30 V, V
V
= 15 V, V
= 15 V, V
= 15 V, V
V
V
V
V
V
DS
V
DS
V
DS
V
Test Condition
GS
DD
DD
DS
GS
GS
DS
= 0 V, V
w 5 V, V
= V
= 0 V, I
= 30 V, V
= 15 V, R
= 15 V, R
= 4.5 V, I
=2.5 V, I
= 15 V, I
I
T
f = 1 MHz
S
C
GS
GEN
GS
= 0.28 A
I = 250 mA
I
GS
GS
GS
D
= 25_C
, I
100 A/ms T
= 250 mA
GS
= 0 V, T
D
= 0 V, f = 1 MHz
D
= 4.5 V, I
= 2.5 V, I
= 4.5 V, R
GS
= 250 mA
D
GS
= 250 mA
L
L
D
= "12 V
D
= 0.75
= 22 W
= 22 W
= 4.5 V
= 0.9
= 0.9
= 0 V
J
= 70_C
D
D
g
g
= 0.9
J
= 0.9
= 1 W
= 25_C
25_C
Min
0.6
30
4
S–52057—Rev. B, 03–Oct–05
0.216
0.308
Typ
27.3
100
105
1.8
1.1
0.4
0.6
1.5
0.8
30
20
10
30
10
50
34
16
3
2
5
Document Number: 73480
"100
Max
0.270
0.385
0.31
160
1.3
2.7
1.7
2.3
1.2
15
45
25
15
75
1
5
4
mV/_C
mV/_C
Unit
nA
mA
pF
p
nC
nC
nC
ns
ns
ns
ns
ns
V
V
A
W
W
S
W
A
A
V
A