BSP250,115 NXP Semiconductors, BSP250,115 Datasheet - Page 4

• Manufacturer Part Number: BSP250,115
• Description: MOSFET P-CH 30V 3A SOT223
• Manufacturer: NXP Semiconductors

Specifications of BSP250,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Mounting Type: Surface Mount
• Power - Max: 1.65W
• Fet Type: MOSFET P-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 25nC @ 10V
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 3A
• Drain To Source Voltage (vdss): 30V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 250 mOhm @ 1A, 10V
• Minimum Operating Temperature: - 65 C
• Configuration: Single Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.25 Ohm @ 10 V
• Gate Charge Qg: 10 nC
• Forward Transconductance Gfs (max / Min): 2 S, 1 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3 A
• Power Dissipation: 1650 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934033450115::BSP250 T/R::BSP250 T/R

Philips Semiconductors
THERMAL CHARACTERISTICS
Note
1. Device mounted on an epoxy printed-circuit board, 40
CHARACTERISTICS
T
1997 Jun 20
R
R
V
V
I
I
I
R
C
C
C
Q
Q
Q
Switching times
t
t
Source-drain diode
V
t
j
DSS
GSS
Don
on
off
rr
SYMBOL
SYMBOL
y
(BR)DSS
GSth
SD
th j-a
th j-s
= 25 C unless otherwise specified.
DSon
iss
oss
rss
P-channel enhancement mode
vertical D-MOS transistor
G
GS
GD
fs
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
gate leakage current
on-state drain current
drain-source on-state resistance
forward transfer admittance
input capacitance
output capacitance
reverse transfer capacitance
total gate charge
gate-source charge
gate-drain charge
turn-on time
turn-off time
source-drain diode forward voltage V
reverse recovery time
PARAMETER
PARAMETER
V
V
V
V
V
V
V
V
V
V
V
V
V
I
V
I
V
I
V
I
V
I
I
D
D
D
D
D
S
GS
GS
GS
GS
GS
GS
GS
GS
DS
GS
GS
GS
GS
GS
GS
GS
GS
GD
= 2.3 A
= 2.3 A
= 2.3 A
= 1 A; R
= 1 A; R
= 1.25 A; di/dt = 100 A/ s
= 10 V; V
= 4.5 V; V
= 4.5 V; I
= 10 V; I
= 0; V
= 0; V
= 0; V
= 10 V; V
= 10 V; V
= 10 V; V
= 0 to 10 V; V
= 10 to 0 V; V
= 0; I
= V
= 0; V
= 20 V; V
= 20 V; I
= 0; I
4
DS
40
CONDITIONS
D
S
DS
DS
DS
; I
DS
= 1.25 A
= 10 A
L
L
D
= 20
= 20
1.5 mm; mounting pad for drain lead minimum 6 cm
= 20 V; f = 1 MHz
= 20 V; f = 1 MHz
= 20 V; f = 1 MHz
= 24 V
D
D
= 1 mA
note 1
D
DS
DS
DS
DS
DS
DS
= 1 A
= 1 A
CONDITIONS
= 0.5 A
= 1 V
= 15 V;
= 15 V;
= 15 V;
= 0
= 5 V
DD
DD
= 20 V;
= 20 V;
1
MIN.
30
1
3
1
VALUE
75
10
0.33
0.22
2
250
140
50
10
1
3
20
50
150
TYP.
Product specification
0.4
0.25
25
80
140
200
MAX.
BSP250
2.8
100
100
1.6
UNIT
K/W
K/W
V
V
nA
nA
A
A
S
pF
pF
pF
nC
nC
nC
ns
ns
V
ns
UNIT
2
.