IXFX160N30T IXYS, IXFX160N30T Datasheet - Page 4
IXFX160N30T
Manufacturer Part Number
IXFX160N30T
Description
MOSFET N-CH 160A 300V PLUS247
Manufacturer
IXYS
Series
GigaMOS™r
Datasheet
1.IXFX160N30T.pdf
(5 pages)
Specifications of IXFX160N30T
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
19 mOhm @ 60A, 10V
Drain To Source Voltage (vdss)
300V
Current - Continuous Drain (id) @ 25° C
160A
Vgs(th) (max) @ Id
5V @ 8mA
Gate Charge (qg) @ Vgs
335nC @ 10V
Input Capacitance (ciss) @ Vds
28000pF @ 25V
Power - Max
1390W
Mounting Type
Through Hole
Package / Case
PLUS247™-3
Vdss, Max, (v)
300
Id(cont), Tc=25°c, (a)
160
Rds(on), Max, Tj=25°c, (?)
0.019
Ciss, Typ, (pf)
28000
Qg, Typ, (nc)
335
Trr, Typ, (ns)
-
Trr, Max, (ns)
-
Pd, (w)
1390
Rthjc, Max, (k/w)
0.09
Package Style
PLUS247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100,000
10,000
1,000
100
350
300
250
200
150
100
200
180
160
140
120
100
80
60
40
20
50
0
0
0.0
3.0
0
f
= 1 MHz
3.4
5
0.2
Fig. 9. Forward Voltage Drop of
3.8
10
Fig. 7. Input Admittance
0.4
Fig. 11. Capacitance
Intrinsic Diode
4.2
15
T
V
V
J
SD
DS
0.6
V
= 125ºC
GS
- Volts
- Volts
T
J
4.6
20
- Volts
= 125ºC
- 40ºC
25ºC
0.8
5.0
25
C iss
C oss
C rss
T
J
1.0
= 25ºC
5.4
30
1.2
5.8
35
6.2
1.4
40
1,000
300
250
200
150
100
100
50
10
10
0
9
8
7
6
5
4
3
2
1
0
1
0
0
1
Fig. 12. Forward-Bias Safe Operating Area
T
T
Single Pulse
V
I
I
J
C
20
R
D
G
= 150ºC
DS
DS(
= 25ºC
= 80A
= 10mA
50
= 150V
on
)
40
Limit
Fig. 8. Transconductance
100
60
Fig. 10. Gate Charge
10
Q
I
D
G
80
- Amperes
150
- NanoCoulombs
V
DS
100
- Volts
200
T
120
J
IXFK160N30T
= - 40ºC
IXFX160N30T
100
140
25ºC
125ºC
250
1ms
160
IXYS REF: F_160N30T(9E)3-23-09
300
25µs
100µs
180
1000
350
200