IXFX160N30T IXYS, IXFX160N30T Datasheet - Page 2
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IXFX160N30T
Manufacturer Part Number
IXFX160N30T
Description
MOSFET N-CH 160A 300V PLUS247
Manufacturer
IXYS
Series
GigaMOS™r
Datasheet
1.IXFX160N30T.pdf
(5 pages)
Specifications of IXFX160N30T
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
19 mOhm @ 60A, 10V
Drain To Source Voltage (vdss)
300V
Current - Continuous Drain (id) @ 25° C
160A
Vgs(th) (max) @ Id
5V @ 8mA
Gate Charge (qg) @ Vgs
335nC @ 10V
Input Capacitance (ciss) @ Vds
28000pF @ 25V
Power - Max
1390W
Mounting Type
Through Hole
Package / Case
PLUS247™-3
Vdss, Max, (v)
300
Id(cont), Tc=25°c, (a)
160
Rds(on), Max, Tj=25°c, (?)
0.019
Ciss, Typ, (pf)
28000
Qg, Typ, (nc)
335
Trr, Typ, (ns)
-
Trr, Max, (ns)
-
Pd, (w)
1390
Rthjc, Max, (k/w)
0.09
Package Style
PLUS247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Symbol
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
(T
I
I
V
t
Q
I
Note 1:
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
S
SM
RM
d(on)
r
d(off)
f
rr
fs
SD
iss
oss
rss
thJC
thCS
g(on)
gs
gd
RM
J
J
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
= 25°C Unless Otherwise Specified)
= 25°C, Unless Otherwise Specified)
Pulse Test, t ≤ 300µs; Duty Cycle, d ≤ 2%.
Test Conditions
V
V
Resistive Switching Times
V
R
V
Test Conditions
V
Repetitive, Pulse Width Limited by T
I
I
V
F
F
DS
GS
GS
GS
GS
R
G
= 60A, V
= 80A, -di/dt = 100A/µs
= 75V, V
= 10V, I
= 0V, V
= 15V, V
= 1Ω (External)
= 10V, V
= 0V
ADVANCE TECHNICAL INFORMATION
GS
D
DS
GS
DS
DS
= 60A, Note 1
= 0V, Note 1
= 25V, f = 1MHz
= 0V
= 0.5 • V
= 0.5 • V
4,835,592
4,881,106
DSS
DSS
4,931,844
5,017,508
5,034,796
, I
, I
D
D
= 0.5 • I
= 0.5 • I
5,049,961
5,063,307
5,187,117
JM
D25
D25
100
Min.
Min.
5,237,481
5,381,025
5,486,715
Characteristic Values
Characteristic Values
1770
0.15
160
125
105
335
123
Typ.
1.09
28
25
56
6,162,665
6,259,123 B1
6,306,728 B1
37
38
Typ.
13
Max.
0.09
Max.
200
160
640
1.3
6,404,065 B1
6,534,343
6,583,505
°C/W
°C/W
µC
nC
nC
nC
nF
pF
pF
ns
ns
ns
ns
ns
S
A
A
V
A
6,683,344
6,710,405 B2 6,759,692
6,710,463
TO-264 (IXFK) Outline
PLUS 247
6,727,585
6,771,478 B2 7,071,537
Dim.
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
Q
R
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
1
2
1
2
Terminals: 1 - Gate
20.80
15.75
19.81
25.91
19.81
20.32
TM
4.83
2.29
1.91
1.14
1.91
2.92
0.61
3.81
5.59
4.32
4.82
2.54
2.00
1.12
2.39
2.90
0.53
0.00
0.00
2.29
3.17
6.07
8.38
3.81
1.78
6.04
1.57
Min.
Min.
Millimeter
5.45 BSC
Millimeter
5.46 BSC
(IXFX) Outline
7,005,734 B2
7,063,975 B2
IXFK160N30T
26.16
19.96
20.83
IXFX160N30T
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
21.34
16.13
20.32
Max.
5.13
2.89
2.10
1.42
2.69
3.09
0.83
0.25
0.25
2.59
3.66
6.27
8.69
4.32
2.29
6.30
1.83
Max.
5.21
2.54
2.16
1.40
2.13
3.12
0.80
4.32
6.20
4.83
1.020
Min.
.190
.100
.079
.044
.094
.114
.021
.780
.000
.000
.800
.090
.125
.239
.330
.150
.070
.238
.062
.190
.090
.075
.045
.075
.115
.024
.819
.620
.780
.150
.220 0.244
.170
Min.
.215 BSC
.215 BSC
Inches
Inches
7,157,338B2
Max.
1.030
Max.
.205
.100
.085
.055
.084
.123
.031
.840
.635
.800
.170
.190
.202
.114
.083
.056
.106
.122
.033
.786
.010
.010
.820
.102
.144
.247
.342
.170
.090
.248
.072