IXFX160N30T IXYS, IXFX160N30T Datasheet - Page 2

• Manufacturer Part Number: IXFX160N30T
• Description: MOSFET N-CH 160A 300V PLUS247
• Manufacturer: IXYS
• Series: GigaMOS™r

Specifications of IXFX160N30T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 19 mOhm @ 60A, 10V
• Drain To Source Voltage (vdss): 300V
• Current - Continuous Drain (id) @ 25° C: 160A
• Vgs(th) (max) @ Id: 5V @ 8mA
• Gate Charge (qg) @ Vgs: 335nC @ 10V
• Input Capacitance (ciss) @ Vds: 28000pF @ 25V
• Power - Max: 1390W
• Mounting Type: Through Hole
• Package / Case: PLUS247™-3
• Vdss, Max, (v): 300
• Id(cont), Tc=25°c, (a): 160
• Rds(on), Max, Tj=25°c, (?): 0.019
• Ciss, Typ, (pf): 28000
• Qg, Typ, (nc): 335
• Trr, Typ, (ns): -
• Trr, Max, (ns): -
• Pd, (w): 1390
• Rthjc, Max, (k/w): 0.09
• Package Style: PLUS247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
(T
I
I
V
t
Q
I
Note 1:
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
S
SM
RM
d(on)
r
d(off)
f
rr
fs
SD
iss
oss
rss
thJC
thCS
g(on)
gs
gd
RM
J
J
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
= 25°C Unless Otherwise Specified)
= 25°C, Unless Otherwise Specified)
Pulse Test, t ≤ 300µs; Duty Cycle, d ≤ 2%.
Test Conditions
V
V
Resistive Switching Times
V
R
V
Test Conditions
V
Repetitive, Pulse Width Limited by T
I
I
V
F
F
DS
GS
GS
GS
GS
R
G
= 60A, V
= 80A, -di/dt = 100A/µs
= 75V, V
= 10V, I
= 0V, V
= 15V, V
= 1Ω (External)
= 10V, V
= 0V
ADVANCE TECHNICAL INFORMATION
GS
D
DS
GS
DS
DS
= 60A, Note 1
= 0V, Note 1
= 25V, f = 1MHz
= 0V
= 0.5 • V
= 0.5 • V
4,835,592
4,881,106
DSS
DSS
4,931,844
5,017,508
5,034,796
, I
, I
D
D
= 0.5 • I
= 0.5 • I
5,049,961
5,063,307
5,187,117
JM
D25
D25
100
Min.
Min.
5,237,481
5,381,025
5,486,715
Characteristic Values
Characteristic Values
1770
0.15
160
125
105
335
123
Typ.
1.09
28
25
56
6,162,665
6,259,123 B1
6,306,728 B1
37
38
Typ.
13
Max.
0.09
Max.
200
160
640
1.3
6,404,065 B1
6,534,343
6,583,505
°C/W
°C/W
µC
nC
nC
nC
nF
pF
pF
ns
ns
ns
ns
ns
S
A
A
V
A
6,683,344
6,710,405 B2 6,759,692
6,710,463
TO-264 (IXFK) Outline
PLUS 247
6,727,585
6,771,478 B2 7,071,537
Dim.
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
Q
R
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
1
2
1
2
Terminals: 1 - Gate
20.80
15.75
19.81
25.91
19.81
20.32
TM
4.83
2.29
1.91
1.14
1.91
2.92
0.61
3.81
5.59
4.32
4.82
2.54
2.00
1.12
2.39
2.90
0.53
0.00
0.00
2.29
3.17
6.07
8.38
3.81
1.78
6.04
1.57
Min.
Min.
Millimeter
5.45 BSC
Millimeter
5.46 BSC
(IXFX) Outline
7,005,734 B2
7,063,975 B2
IXFK160N30T
26.16
19.96
20.83
IXFX160N30T
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
21.34
16.13
20.32
Max.
5.13
2.89
2.10
1.42
2.69
3.09
0.83
0.25
0.25
2.59
3.66
6.27
8.69
4.32
2.29
6.30
1.83
Max.
5.21
2.54
2.16
1.40
2.13
3.12
0.80
4.32
6.20
4.83
1.020
Min.
.190
.100
.079
.044
.094
.114
.021
.780
.000
.000
.800
.090
.125
.239
.330
.150
.070
.238
.062
.190
.090
.075
.045
.075
.115
.024
.819
.620
.780
.150
.220 0.244
.170
Min.
.215 BSC
.215 BSC
Inches
Inches
7,157,338B2
Max.
1.030
Max.
.205
.100
.085
.055
.084
.123
.031
.840
.635
.800
.170
.190
.202
.114
.083
.056
.106
.122
.033
.786
.010
.010
.820
.102
.144
.247
.342
.170
.090
.248
.072