IXFX160N30T IXYS, IXFX160N30T Datasheet - Page 3

• Manufacturer Part Number: IXFX160N30T
• Description: MOSFET N-CH 160A 300V PLUS247
• Manufacturer: IXYS
• Series: GigaMOS™r

Specifications of IXFX160N30T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 19 mOhm @ 60A, 10V
• Drain To Source Voltage (vdss): 300V
• Current - Continuous Drain (id) @ 25° C: 160A
• Vgs(th) (max) @ Id: 5V @ 8mA
• Gate Charge (qg) @ Vgs: 335nC @ 10V
• Input Capacitance (ciss) @ Vds: 28000pF @ 25V
• Power - Max: 1390W
• Mounting Type: Through Hole
• Package / Case: PLUS247™-3
• Vdss, Max, (v): 300
• Id(cont), Tc=25°c, (a): 160
• Rds(on), Max, Tj=25°c, (?): 0.019
• Ciss, Typ, (pf): 28000
• Qg, Typ, (nc): 335
• Trr, Typ, (ns): -
• Trr, Max, (ns): -
• Pd, (w): 1390
• Rthjc, Max, (k/w): 0.09
• Package Style: PLUS247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2009 IXYS CORPORATION, All rights reserved
160
140
120
100
160
140
120
100
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
80
60
40
20
80
60
40
20
0
0
0.0
0
0
Fig. 5. R
V
GS
0.4
40
= 10V
1
Fig. 1. Output Characteristics
Fig. 3. Output Characteristics
DS(on)
0.8
80
2
vs. Drain Current
Normalized to I
1.2
120
I
D
V
V
@ 25ºC
@ 125ºC
3
- Amperes
DS
DS
1.6
- Volts
- Volts
V
160
GS
V
GS
= 10V
4
= 10V
2.0
7V
7V
200
5V
D
6V
6V
5.5V
5V
T
= 80A Value
5
J
2.4
= 125ºC
240
T
J
= 25ºC
6
2.8
280
3.2
7
300
250
200
150
100
180
160
140
120
100
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
50
80
60
40
20
0
0
-50
-50
0
Fig. 4. R
V
V
GS
Fig. 2. Extended Output Characteristics
GS
2
-25
-25
= 10V
= 10V
Fig. 6. Maximum Drain Current vs.
7V
4
DS(on)
vs. Junction Temperature
0
0
T
6V
5.5V
5V
C
6
T
Case Temperature
- Degrees Centigrade
J
Normalized to I
25
- Degrees Centigrade
25
8
V
@ 25ºC
DS
50
50
10
- Volts
I
12
D
75
75
= 160A
IXFK160N30T
IXFX160N30T
D
14
= 80A Value
100
100
16
I
D
= 80A
125
125
18
150
150
20