STW43NM50N STMicroelectronics, STW43NM50N Datasheet - Page 7

• Manufacturer Part Number: STW43NM50N
• Description: MOSFET N-CH 500V 37A TO-247
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STW43NM50N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 85 mOhm @ 18.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 37A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 140nC @ 10V
• Input Capacitance (ciss) @ Vds: 4200pF @ 50V
• Power - Max: 255W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-8459-5

STW43NM50N
Figure 8.
Figure 10. Normalized gate threshold voltage
Figure 12. Source-drain diode forward
V
(
norm
GS(th)
V
1.1
0.7
1.0
0.9
0.8
0.4
1.0
0.6
(V)
0.8
SD
V
(V)
12
10
)
GS
0
2
8
6
4
0
0
-25
Gate charge vs gate-source voltage Figure 9.
vs temperature
characteristics
V
V
I
DD
D
GS
10
0
=37A
50
=400V
=10V
25
20
50
100
I
V
D
DS
=250µA
75 100
=V
30
GS
150
-50°C
150°C
25°C
T
I
SD
J
(°C)
Q
(A)
Doc ID 14168 Rev 5
g
AM00872v1
(nC)
AM00866v1
AM00876v1
Figure 11. Normalized on resistance vs
Figure 13. Normalized B
v
R
(norm)
DS(on)
BV
(norm)
10000
0.5
2.1
1.3
0.9
1.01
0.97
1.7
1.05
0.93
1000
(pF)
100
DSS
C
10
0.1
-25
-25
Capacitance variations
temperature
V
f=1MHz
V
DS
GS
=50V
0
=0
0
I
D
1
=1mA
25
V
I
25
D
GS
=18.5A
=10V
Electrical characteristics
50
50
10
VDSS
75 100
75
vs temperature
100
100
T
T
Coss
Ciss
Crss
I
J
D
J
(°C)
(°C)
(A)
AM00871v1
AM00867v1
AM00869v1
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