STW43NM50N STMicroelectronics, STW43NM50N Datasheet - Page 3

• Manufacturer Part Number: STW43NM50N
• Description: MOSFET N-CH 500V 37A TO-247
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STW43NM50N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 85 mOhm @ 18.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 37A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 140nC @ 10V
• Input Capacitance (ciss) @ Vds: 4200pF @ 50V
• Power - Max: 255W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-8459-5

STW43NM50N
1
Electrical ratings
Table 2.
1. Pulse width limited by safe operating area
2. I
Table 3.
Table 4.
Rthj-case
Rthj-amb
Symbol
dv/dt
Symbol
Symbol
I
SD
DM
P
V
V
T
E
I
I
TOT
I
T
GS
T
DS
stg
D
D
AS
AS
j
≤ 37 A, di/dt ≤ 400 A/µs, V
l
(1)
(2)
Drain-source voltage (V
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Peak diode recovery voltage slope
Storage temperature
Max. operating junction temperature
Absolute maximum ratings
Thermal data
Avalanche characteristics
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering
purpose
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
Single pulse avalanche energy
(starting T
J
=25 °C, I
DD
Parameter
Parameter
Doc ID 14168 Rev 5
Parameter
= 80% V
C
D
=I
= 25 °C
GS
AS
, V
= 0)
(BR)DSS
DD
C
C
=50 V)
= 25 °C
= 100 °C
–55 to 150
Value
Value
Value
± 25
1000
0.49
500
148
255
150
300
37
23
15
50
15
Electrical ratings
°C/W
°C/W
Unit
Unit
V/ns
Unit
°C
mJ
°C
°C
W
V
V
A
A
A
A
3/12