STP42N65M5 STMicroelectronics, STP42N65M5 Datasheet - Page 14

• Manufacturer Part Number: STP42N65M5
• Description: MOSFET N-CH 650V 33A TO-220
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STP42N65M5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 79 mOhm @ 16.5A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 33A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 100nC @ 10V
• Input Capacitance (ciss) @ Vds: 4650pF @ 100V
• Power - Max: 190W
• Mounting Type: Through Hole
• Package / Case: TO-220
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 33A
• Drain Source Voltage Vds: 710V
• On Resistance Rds(on): 0.07ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Configuration: Single
• Resistance Drain-source Rds (on): 0.079 Ohm @ 10 V
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 33 A
• Power Dissipation: 190000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-8791-5

Package mechanical data
14/18
Dim
A1
b1
c2
e1
L1
L2
A
D
E
b
c
e
L
4.40
2.40
0.61
1.14
0.49
1.23
8.95
2.40
4.95
3.50
1.27
Min
10
13
Doc ID 15317 Rev 3
I²PAK (TO-262) mechanical data
mm
Typ
10.40
Max
4.60
2.72
0.88
1.70
0.70
1.32
9.35
2.70
5.15
3.93
1.40
14
0.173
0.094
0.024
0.044
0.019
0.048
0.352
0.094
0.194
0.393
0.511
0.137
0.050
Min
inch
Typ
STx42N65M5
0.034
0.027
0.368
0.106
0.181
0.107
0.066
0.052
0.202
0.410
0.551
0.154
0.055
Max