STP42N65M5 STMicroelectronics, STP42N65M5 Datasheet - Page 12

• Manufacturer Part Number: STP42N65M5
• Description: MOSFET N-CH 650V 33A TO-220
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STP42N65M5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 79 mOhm @ 16.5A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 33A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 100nC @ 10V
• Input Capacitance (ciss) @ Vds: 4650pF @ 100V
• Power - Max: 190W
• Mounting Type: Through Hole
• Package / Case: TO-220
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 33A
• Drain Source Voltage Vds: 710V
• On Resistance Rds(on): 0.07ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Configuration: Single
• Resistance Drain-source Rds (on): 0.079 Ohm @ 10 V
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 33 A
• Power Dissipation: 190000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-8791-5

Package mechanical data
12/18
Dim.
øP
øR
A1
b1
b2
L1
L2
A
D
E
S
b
c
e
L
Doc ID 15317 Rev 3
19.85
15.45
14.20
TO-247 mechanical data
Min.
4.85
2.20
0.40
3.70
3.55
4.50
1.0
2.0
3.0
18.50
mm.
Typ.
5.45
5.50
STx42N65M5
20.15
15.75
14.80
Max.
5.15
2.60
1.40
2.40
3.40
0.80
4.30
3.65
5.50