IRFS3207 International Rectifier, IRFS3207 Datasheet - Page 3

• Manufacturer Part Number: IRFS3207
• Description: MOSFET N-CH 75V 180A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFS3207

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.5 mOhm @ 75A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 180A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 260nC @ 10V
• Input Capacitance (ciss) @ Vds: 7600pF @ 50V
• Power - Max: 330W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFS3207

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Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
1000.0
12000
10000
100.0
1000
8000
6000
4000
2000
10.0
100
1.0
10
1
0
0.1
4.0
Fig 3. Typical Transfer Characteristics
1
Fig 1. Typical Output Characteristics
T J = 175°C
TOP
BOTTOM
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
5.0
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
T J = 25°C
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
4.5V
1
6.0
Ciss
Coss
Crss
V DS = 50V
≤ 60µs PULSE WIDTH
≤ 60µs PULSE WIDTH
Tj = 25°C
f = 1 MHZ
10
7.0
10
8.0
100
9.0
100
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
Fig 4. Normalized On-Resistance vs. Temperature
1000
100
2.5
2.0
1.5
1.0
0.5
20
16
12
10
8
4
0
-60 -40 -20 0
0.1
0
Fig 2. Typical Output Characteristics
TOP
BOTTOM
I D = 75A
I D = 75A
V GS = 10V
40
V DS , Drain-to-Source Voltage (V)
T J , Junction Temperature (°C)
Q G Total Gate Charge (nC)
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
80
1
20 40 60 80 100 120 140 160 180
120
V DS = 60V
VDS= 38V
4.5V
≤ 60µs PULSE WIDTH
Tj = 175°C
160
10
200
240
280
100
3