IRFS3207 International Rectifier, IRFS3207 Datasheet

IRFS3207

Manufacturer Part Number

IRFS3207

Description

MOSFET N-CH 75V 180A D2PAK

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRFB3207PBF.pdf (12 pages)

Specifications of IRFS3207

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

4.5 mOhm @ 75A, 10V

Drain To Source Voltage (vdss)

75V

Current - Continuous Drain (id) @ 25° C

180A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

260nC @ 10V

Input Capacitance (ciss) @ Vds

7600pF @ 50V

Power - Max

330W

Mounting Type

Surface Mount

Package / Case

D²Pak, TO-263 (2 leads + tab)

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Other names

*IRFS3207

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRFS3207

Manufacturer:

Quantity:

12 500

Company:

H&T Electronics

Part Number:

IRFS3207PBF

Quantity:

100

Company:

Meier Automation Equipment Co., Limited

Part Number:

IRFS3207TRLPBF

Manufacturer:

Quantity:

20 000

Company:

Meier Automation Equipment Co., Limited

Part Number:

IRFS3207Z

Manufacturer:

Quantity:

20 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRFS3207ZPBF

Manufacturer:

Quantity:

12 500

Company:

Meier Automation Equipment Co., Limited

Part Number:

IRFS3207ZPBF

Manufacturer:

Quantity:

20 000

Current page: 1 of 12
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Applications

Benefits

www.irf.com

dV/dt

Absolute Maximum Ratings

Avalanche Characteristics

Thermal Resistance

STG

AS (Thermally limited)

θJC

θCS

θJA

@ T

High Efficiency Synchronous Rectification in SMPS

Uninterruptible Power Supply

High Speed Power Switching

Hard Switched and High Frequency Circuits

Worldwide Best R

Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

Fully Characterized Capacitance and Avalanche

Enhanced body diode dV/dt and dI/dt Capability

SOA

Symbol

= 25°C

= 100°C

= 25°C

Continuous Drain Current, V

Pulsed Drain Current

Maximum Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Peak Diode Recovery

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case)

Mounting torque, 6-32 or M3 screw

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Junction-to-Case

Case-to-Sink, Flat Greased Surface , TO-220

Junction-to-Ambient, TO-220

Junction-to-Ambient (PCB Mount) , D

DS(on)

in TO-220

Parameter

Ã™

@ 10V

Pak

TO-220AB

IRFB3207

See Fig. 14, 15, 16a, 16b,

Typ.

0.50

–––

DSS

10lb

DS(on)

-55 to + 175

in (1.1N

IRFS3207

180

130

Max.

HEXFET Power MOSFET

720

330

± 20

300

910

2.2

5.8

™

Pak

typ.

max.

Max.

0.45

–––

IRFSL3207

IRFB3207

IRFS3207

3.6m

4.5m

180A

75V

IRFSL3207

TO-262

Units

°C/W

W/°C

V/ns

°C

03/06/06

Related parts for IRFS3207

IRFS3207 Summary of contents

Page 1

... HEXFET Power MOSFET D V 75V DSS 3.6m R typ. DS(on) max. 4.5m I 180A Pak IRFS3207 IRFSL3207 Max. ™ 180 ™ 130 720 330 2.2 ± 20 5.8 - 175 300 x x 10lb in (1.1N m) 910 See Fig. 14, 15, 16a, 16b, Typ. Max. ––– ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Symbol Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS I ...

Page 3

VGS TOP 15V 10V 8.0V 6.0V 5.5V 5.0V 100 4.8V BOTTOM 4.5V 10 4.5V ≤ 60µs PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 ...

Page 4

175°C 100.0 10 25°C 1.0 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2 Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 200 LIMITED BY ...

Page 5

D = 0.50 0.1 0.20 0.10 0.05 0.01 0.02 0.01 0.001 SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case 100 Duty Cycle = Single Pulse 10 Allowed avalanche Current vs avalanche ...

Page 6

Temperature ( °C ) Fig 16. Threshold Voltage Vs. Temperature 45A ...

Page 7

D.U.T + ƒ ‚ - • • • SD • Fig 21 D.U 20V V GS 0.01 Ω Fig 22a. Unclamped Inductive Test Circuit ...

Page 8

TO-220AB packages are not recommended for Surface Mount Application. 8 www.irf.com ...

Page 9

TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information @Y6HQ @) UCDTÃDTÃ6IÃDS " " PUÃ8P9@Ã &'( 6TT@H7 @9ÃPIÃXXÃ (Ã ((& DIÃUC@Ã6TT@H7 `Ã DI@ÃÅ8Å www.irf.com DIU@SI6UDPI6 S@8UDAD@S PBP 6TT@H7 ` PUÃ8P9@ 5 DIU@SI6UDPI6 S@8UDAD@S PBP 6TT@H7 ` ...

Page 10

UCDTÃDTÃ6IÃDSA$"TÃXDUC GPUÃ8P @Ã'!# 6TT@H7G@ ÃPIÃXXÃ!Ã! DIÃUC@Ã6TT@H7G`ÃGDI@ÃÅGÅ DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G` GPUÃ8P @ DIU@SI6UDPI6G S@8UDAD@S A$"T GPBP 6TT@H7G` GPUÃ8P @ Q6SUÃIVH7@S A$"T 6U@Ã8P @ `@6SÃÃ2Ã! X@@FÃ! GDI@ÃG Q6SUÃIVH7@S 6U@Ã8P @ QÃ2Ã @TDBI6U@TÃG@6 ÃÃAS@@ QSP V8UÃPQUDPI6G `@6SÃÃ2Ã! X@@FÃ! ...

Page 11

TRR FEED DIRECTION 1.85 (.073) 1.65 (.065) TRL FEED DIRECTION 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. IR WORLD HEADQUARTERS: 233 ...

Page 12

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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