STW15NM60N STMicroelectronics, STW15NM60N Datasheet - Page 8

• Manufacturer Part Number: STW15NM60N
• Description: MOSFET N-CH 600V 14A TO-247
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STW15NM60N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 299 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 37nC @ 10V
• Input Capacitance (ciss) @ Vds: 1250pF @ 50V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.299 Ohms
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 14 A
• Power Dissipation: 125 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7618-5; STW15NM60N

Electrical characteristics
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Figure 13. Normalized gate threshold voltage
Figure 15. Source-drain diode forward
vs temperature
characteristics
STB15NM60N - STF/I15NM60N - STP15NM60N - STW15NM60N
Figure 14. Normalized on resistance vs
Figure 16. Normalized B
temperature
VDSS
vs temperature