STW15NM60N STMicroelectronics, STW15NM60N Datasheet - Page 5

• Manufacturer Part Number: STW15NM60N
• Description: MOSFET N-CH 600V 14A TO-247
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STW15NM60N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 299 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 37nC @ 10V
• Input Capacitance (ciss) @ Vds: 1250pF @ 50V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.299 Ohms
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 14 A
• Power Dissipation: 125 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7618-5; STW15NM60N

STB15NM60N - STF/I15NM60N - STP15NM60N - STW15NM60N
Table 6.
Table 7.
1. Pulse width limited by safe operating area
2.
Symbol
Symbol
I
SDM
V
t
t
I
I
d(on)
d(off)
Pulsed: pulse duration = 300µs, duty cycle 1.5%
RRM
RRM
I
SD
Q
Q
t
SD
t
t
t
r
f
rr
rr
rr
rr
(2)
(1)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Source drain diode
Parameter
Parameter
V
R
(see Figure 17)
I
I
V
(see Figure 19)
V
di/dt =100A/µs, I
Tj = 150°C
SD
SD
DD
DD
DD
G
= 4.7Ω, V
=14A, di/dt =100A/µs,
= 14A, V
= 300V, I
= 100V
= 100V, Tj = 25°C
Test conditions
Test conditions
(see Figure 19)
GS
D
GS
=0
= 7A,
SD
= 10V
= 14A
Electrical characteristics
Min
Min
Typ
390
500
Typ
25
25
12
14
80
30
5
7
Max
Max Unit
1.3
14
56
Unit
µC
µC
ns
ns
ns
ns
ns
ns
A
A
V
A
A
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