STW11NK100Z STMicroelectronics, STW11NK100Z Datasheet - Page 6

• Manufacturer Part Number: STW11NK100Z
• Description: MOSFET N-CH 1KV 8.3A TO-247
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STW11NK100Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.38 Ohm @ 4.15A, 10V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 8.3A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 162nC @ 10V
• Input Capacitance (ciss) @ Vds: 3500pF @ 25V
• Power - Max: 230W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.38 Ohm @ 10 V
• Drain-source Breakdown Voltage: 1000 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 8.3 A
• Power Dissipation: 230000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-3255-5

Electrical characteristics
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Table 7.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Symbol
I
V
SDM
I
I
RRM
RRM
I
SD
Q
Q
SD
t
t
rr
rr
rr
rr
(2)
(1)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Source drain diode
Parameter
I
I
di/dt = 100A/µs,
V
(see
I
di/dt = 100A/µs,
V
(see
SD
SD
SD
DD
DD
=8.3A, V
=8.3,
=8A,
Test conditions
=80V, Tj=25°C
=80V, Tj=150°C
Figure
Figure
GS
18)
18)
=0
Min
Typ.
4.48
4.57
560
620
16
16
STW11NK100Z
Max
33.2
8.3
1.6
Unit
µC
µC
ns
ns
A
A
V
A
A