STW11NK100Z STMicroelectronics, STW11NK100Z Datasheet

MOSFET N-CH 1KV 8.3A TO-247

STW11NK100Z

Manufacturer Part Number
STW11NK100Z
Description
MOSFET N-CH 1KV 8.3A TO-247
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Datasheet

Specifications of STW11NK100Z

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.38 Ohm @ 4.15A, 10V
Drain To Source Voltage (vdss)
1000V (1kV)
Current - Continuous Drain (id) @ 25° C
8.3A
Vgs(th) (max) @ Id
4.5V @ 100µA
Gate Charge (qg) @ Vgs
162nC @ 10V
Input Capacitance (ciss) @ Vds
3500pF @ 25V
Power - Max
230W
Mounting Type
Through Hole
Package / Case
TO-247-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.38 Ohm @ 10 V
Drain-source Breakdown Voltage
1000 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
8.3 A
Power Dissipation
230000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-3255-5

Available stocks

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Manufacturer
Quantity
Price
Part Number:
STW11NK100Z
Manufacturer:
ST
Quantity:
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Part Number:
STW11NK100Z
Manufacturer:
ST
Quantity:
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Part Number:
STW11NK100Z
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Order codes
General features
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Such series complements ST full range of high
voltage MOSFETs including revolutionary
MDmesh™ products.
Applications
July 2006
STW11NK100Z
Extremely high dv/dt capability
100% avalanche tested
Gate charge minimized
Very low intrinsic capacitances
Very good manufacturing repeatibility
Switching application
Type
STW11NK100Z
Part number
(@Tjmax)
1000 V
V
DSS
Zener - Protected SuperMESH™ PowerMOSFET
< 1.38 Ω 8.3 A 230W
R
DS(on)
W11NK100Z
Marking
I
D
N-channel 1000V - 1.1Ω - 8.3A - TO-247
Pw
Rev 2
Internal schematic diagram
Package
TO-247
STW11NK100Z
STW11NK100Z
TO-247
Packaging
Tube
www.st.com
1/14
14

Related parts for STW11NK100Z

STW11NK100Z Summary of contents

Page 1

... MOSFETs including revolutionary MDmesh™ products. Applications ■ Switching application Order codes Part number STW11NK100Z July 2006 N-channel 1000V - 1.1Ω - 8.3A - TO-247 I Pw DS(on) D Internal schematic diagram Marking W11NK100Z Rev 2 STW11NK100Z STW11NK100Z TO-247 Package Packaging TO-247 Tube 1/14 www.st.com 14 ...

Page 2

... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.1 Electrical characteristics (curves) 3 Test circuit Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . 10 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/14 STW11NK100Z . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 ...

Page 3

... STW11NK100Z 1 Electrical ratings Table 1. Absolute maximum ratings Symbol V Drain-source voltage ( Drain-gate voltage (R DGR V Gate-source voltage GS I Drain current (continuous Drain current (continuous (1) I Drain current (pulsed Total dissipation at T TOT Derating Factor V Gate source ESD(HBM-C=100pF, R=1,5KΩ) ESD (G-S) (2) dv/dt Peak diode recovery voltage slope ...

Page 4

... In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 4/14 Parameter Test conditions STW11NK100Z Min. Typ. Max. Unit 30 ...

Page 5

... STW11NK100Z 2 Electrical characteristics (T =25°C unless otherwise specified) CASE Table 5. On/off states Symbol Drain-source breakdown V (BR)DSS voltage Zero gate voltage drain I DSS current (V Gate body leakage current I GSS ( Gate threshold voltage GS(th) Static drain-source on R DS(on) resistance Table 6. Dynamic Symbol (1) g Forward transconductance V ...

Page 6

... Pulsed: pulse duration=300µs, duty cycle 1.5% 6/14 Parameter Test conditions I =8.3A =8.3, SD di/dt = 100A/µs, V =80V, Tj=25°C DD (see Figure I =8A, SD di/dt = 100A/µs, V =80V, Tj=150°C DD (see Figure STW11NK100Z Min Typ. Max 8.3 33.2 =0 1.6 GS 560 4.48 16 18) 620 4.57 16 18) Unit µ µ ...

Page 7

... STW11NK100Z 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 3. Output characterisics Figure 5. Transconductance Electrical characteristics Figure 2. Thermal impedance Figure 4. Transfer characteristics Figure 6. Static drain-source on resistance 7/14 ...

Page 8

... Electrical characteristics Figure 7. Gate charge vs gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs temperature Figure 11. Source-drain diode forward characteristics 8/14 Capacitance variations Figure 10. Normalized on resistance vs temperature Figure 12. Normalized B VDSS STW11NK100Z vs temperature ...

Page 9

... STW11NK100Z Figure 13. Maximum avalanche energy vs temperature Electrical characteristics 9/14 ...

Page 10

... Test circuit Package mechanical data Figure 14. Unclamped Inductive load test circuit Figure 16. Switching times test circuit for resistive load Figure 18. Test circuit for inductive load switching and diode recovery times 10/14 Figure 15. Unclamped Inductive waveform Figure 17. Gate charge test circuit STW11NK100Z ...

Page 11

... STW11NK100Z 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label ...

Page 12

... STW11NK100Z inch MIN. TYP. MAX. 0.19 0.20 0.086 0.102 0.039 0.055 0.079 0.094 0.118 0.134 0.015 0.03 0.781 0.793 0.608 0.620 ...

Page 13

... STW11NK100Z 5 Revision history Table 8. Revision history Date 21-Jun-2004 31-Jul-2006 Revision 1 Preliminary version 2 New template, no content change. Revision history Changes 13/14 ...

Page 14

... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 14/14 Please Read Carefully: © 2006 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com STW11NK100Z ...

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