STW14NM65N STMicroelectronics, STW14NM65N Datasheet - Page 9

• Manufacturer Part Number: STW14NM65N
• Description: MOSFET N-CH 650V 12A TO-247
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STW14NM65N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 380 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 45nC @ 10V
• Input Capacitance (ciss) @ Vds: 1300pF @ 50V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.38 Ohms
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 12 A
• Power Dissipation: 125 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7032-5

STB/F/I/P/W14NM65N
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Figure 18. Switching times test circuit for
Figure 20. Test circuit for inductive load
Figure 22. Unclamped inductive waveform
resistive load
switching and diode recovery times
Test circuit
Figure 19. Gate charge test circuit
Figure 21. Unclamped Inductive load test
Figure 23. Switching time waveform
circuit
Test circuit
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