STW14NM65N STMicroelectronics, STW14NM65N Datasheet - Page 16

• Manufacturer Part Number: STW14NM65N
• Description: MOSFET N-CH 650V 12A TO-247
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STW14NM65N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 380 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 45nC @ 10V
• Input Capacitance (ciss) @ Vds: 1300pF @ 50V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.38 Ohms
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 12 A
• Power Dissipation: 125 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7032-5

Packaging mechanical data
5
16/18
Packaging mechanical data
* on sales type
DIM.
D1
A0
B0
K0
P0
P1
P2
W
D
E
F
R
T
TAPE MECHANICAL DATA
MIN.
10.5
15.7
1.59
1.65
0.25
23.7
11.4
11.9
1.5
4.8
3.9
1.9
50
D
mm
2
PAK FOOTPRINT
MAX.
10.7
15.9
1.61
1.85
11.6
12.1
0.35 0.0098 0.0137
24.3
1.6
5.0
4.1
2.1
0.413 0.421
0.618 0.626
0.059 0.063
0.062 0.063
0.065 0.073
0.449 0.456
0.189 0.197
0.153 0.161
0.468 0.476
0.075 0.082
1.574
0.933 0.956
MIN.
inch
TAPE AND REEL SHIPMENT
MAX.
DIM.
C
D
G
N
A
B
T
BASE QTY
REEL MECHANICAL DATA
1000
MIN.
12.8
20.2
24.4
100
1.5
mm
STB/F/I/P/W14NM65N
MAX.
13.2
26.4
30.4
330
BULK QTY
0.059
0.504 0.520
0.960 1.039
3.937
0795
MIN.
1000
inch
12.992
MAX.
1.197