STP11NM80 STMicroelectronics, STP11NM80 Datasheet - Page 10

• Manufacturer Part Number: STP11NM80
• Description: MOSFET N-CH 800V 11A TO-220
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STP11NM80

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 400 mOhm @ 5.5A, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 43.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 1630pF @ 25V
• Power - Max: 150W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.4 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 8 S
• Drain-source Breakdown Voltage: 800 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 11 A
• Power Dissipation: 150000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 65 C
• Continuous Drain Current Id: 11A
• Drain Source Voltage Vds: 800V
• On Resistance Rds(on): 400mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4369-5

STP11NM8O - STF11NM80 - STB11NM80 - STW11NM80
10/14
DIM.
A1
D1
V2
b2
L1
L2
L4
c2
A
D
E
H
b
c
e
L
10.04
13.10
4.32
0.00
0.71
1.15
0.46
1.22
8.89
8.01
1.30
1.15
1.27
2.70
MIN.
0°
TO-263 (D
9.02
2.54
mm.
TYP
2
PAK) MECHANICAL DATA
10.28
13.70
MAX.
4.57
0.25
0.91
1.40
0.61
1.40
9.40
1.70
1.39
1.77
3.10
8°
0.178
0.028
0.045
0.018
0.048
0.350
0.315
0.395
0.515
0.051
0.045
0.050
0.106
0.00
MIN.
0°
0.355
0.010
TYP.
inch
0.180
0.009
0.350
0.055
0.024
0.055
0.370
0.404
0.540
0.067
0.054
0.069
0.122
MAX.
8°