STP11NM80 STMicroelectronics, STP11NM80 Datasheet

MOSFET N-CH 800V 11A TO-220

STP11NM80

Manufacturer Part Number
STP11NM80
Description
MOSFET N-CH 800V 11A TO-220
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheets

Specifications of STP11NM80

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
400 mOhm @ 5.5A, 10V
Drain To Source Voltage (vdss)
800V
Current - Continuous Drain (id) @ 25° C
11A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
43.6nC @ 10V
Input Capacitance (ciss) @ Vds
1630pF @ 25V
Power - Max
150W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.4 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
8 S
Drain-source Breakdown Voltage
800 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
11 A
Power Dissipation
150000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 65 C
Continuous Drain Current Id
11A
Drain Source Voltage Vds
800V
On Resistance Rds(on)
400mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-4369-5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STP11NM80
Manufacturer:
ST
Quantity:
12 000
Part Number:
STP11NM80
Manufacturer:
ST
0
Part Number:
STP11NM80
Manufacturer:
ST
Quantity:
20 000
Part Number:
STP11NM80
0
Company:
Part Number:
STP11NM80
Quantity:
6 000
Part Number:
STP11NM80,11NM80
Manufacturer:
ST
0
Table 1: General Features
DESCRIPTION
The MDmesh™ associates the Multiple Drain pro-
cess with the Company’s PowerMesh™ horizontal
layout assuring an oustanding low on-resistance.
The adoption of the Company’s proprietary strip
technique yields overall dynamic performance that
is significantly better than that of similar competi-
tion’s products.
APPLICATIONS
The 800 V MDmesh™ family is very suitable for
single switch applications in particular for Flyback
and Forward converter topologies and for ignition
circuits in the field of lighting.
Table 2: Order Codes
September 2004
STP11NM80
STF11NM80
STB11NM80
STW11NM80
TYPICAL R
LOW GATE INPUT RESISTANCE
LOW INPUT CAPACITANCE AND GATE
CHARGE
BEST R
N-CHANNEL 800V - 0.35
TYPE
STB11NM80T4
SALES TYPE
STW11NM80
STP11NM80
STF11NM80
DS
(on)*Qg IN THE INDUSTRY
DS
800 V
800 V
800 V
800 V
V
DSS
(on) = 0.35
< 0.40
< 0.40
< 0.40
< 0.40
R
DS(on)
MARKING
W11NM80
B11NM80
P11NM80
F11NM80
R
14
14
14
14
DS(on)
nC
nC
nC
nC
*Q
g
11 A
11 A
11 A
11 A
I
D
STB11NM80 - STW11NM80
- 11 A TO-220 /FP/D
STP11NM80 - STF11NM80
Figure 1: Package
Figure 2: Internal Schematic Diagram
PACKAGE
TO-220FP
TO-220
TO-247
D
2
TO-220
PAK
D
2
PAK
1
1
2
3
3
MDmesh™ MOSFET
TAPE & REEL
PACKAGING
2
PAK/TO-247
TUBE
TUBE
TUBE
TO-220FP
Rev. 2
TO-247
1
1
2
2
3
3
1/14

Related parts for STP11NM80

STP11NM80 Summary of contents

Page 1

... The 800 V MDmesh™ family is very suitable for single switch applications in particular for Flyback and Forward converter topologies and for ignition circuits in the field of lighting. Table 2: Order Codes SALES TYPE STP11NM80 STF11NM80 STB11NM80T4 STW11NM80 September 2004 STP11NM80 - STF11NM80 STB11NM80 - STW11NM80 - 11 A TO-220 /FP/D Figure 1: Package DS(on ...

Page 2

STP11NM8O - STF11NM80 - STB11NM80 - STW11NM80 Table 3: Absolute Maximum ratings Symbol V Drain-source Voltage ( Drain-gate Voltage (R DGR V Gate- source Voltage GS I Drain Current (continuous Drain Current (continuous) at ...

Page 3

ELECTRICAL CHARACTERISTICS (T Table 6: On/Off Symbol Parameter V Drain-source (BR)DSS Breakdown Voltage I Zero Gate Voltage DSS Drain Current ( Gate-body Leakage GSS Current ( Gate Threshold Voltage GS(th) R Static Drain-source On ...

Page 4

STP11NM8O - STF11NM80 - STB11NM80 - STW11NM80 Figure 3: Safe Operating Area For D TO-247 / TO-220 Figure 4: Thermal Impedance For D TO-247 / TO-220 Figure 5: Output Characteristics 4/14 2 PAK/ Figure 6: Safe Operating Area For TO-220FP ...

Page 5

Figure 9: Transfer Characteristics Figure 10: Transconductance Figure 11: Gate Charge vs Gate-source Voltage STP11NM8O - STF11NM80 - STB11NM80 - STW11NM80 Figure 12: Normalized Gate Threshold Voltage vs Temperature Figure 13: Static Drain-Source On Resistance Figure 14: Capacitance Variations 5/14 ...

Page 6

STP11NM8O - STF11NM80 - STB11NM80 - STW11NM80 Figure 15: Normalized On Resistance vs Tem- perature Figure 16: Source-Drain Forward Characteris- tics 6/14 Figure 17: Normalized BV DSS vs Temperature ...

Page 7

Figure 18: Unclamped Inductive Load Test Cir- cuit Figure 19: Switching Times Test Circuit For Resistive Load Figure 20: Test Circuit For Inductive Load Switching and Diode Recovery Times STP11NM8O - STF11NM80 - STB11NM80 - STW11NM80 Figure 21: Unclamped Inductive ...

Page 8

STP11NM8O - STF11NM80 - STB11NM80 - STW11NM80 DIM. MIN. A 4.40 b 0.61 b1 1.15 c 0.49 D 15. 2.40 e1 4.95 F 1.23 H1 6. 3.50 L20 L30 øP 3.75 Q ...

Page 9

STP11NM8O - STF11NM80 - STB11NM80 - STW11NM80 TO-220FP MECHANICAL DATA mm. DIM. MIN. TYP A 4.4 B 2.5 D 2.5 E 0.45 F 0.75 F1 1.15 F2 1.15 G 4. 28.6 L4 9.8 ...

Page 10

STP11NM8O - STF11NM80 - STB11NM80 - STW11NM80 DIM. MIN. A 4.32 A1 0.00 b 0.71 b2 1.15 c 0.46 c2 1.22 D 8.89 D1 8.01 E 10. 13.10 L 1.30 L1 1.15 L2 1.27 L4 2.70 V2 0° ...

Page 11

STP11NM8O - STF11NM80 - STB11NM80 - STW11NM80 TO-247 MECHANICAL DATA mm. DIM. MIN. TYP A 4.85 A1 2.20 b 1.0 b1 2.0 b2 3.0 c 0.40 D 19.85 E 15.45 e 5.45 L 14.20 L1 3.70 L2 18.50 øP 3.55 ...

Page 12

STP11NM8O - STF11NM80 - STB11NM80 - STW11NM80 2 D PAK FOOTPRINT TAPE AND REEL SHIPMENT (suffix ”T4”)* TAPE MECHANICAL DATA mm DIM. MIN. MAX. A0 10.5 10.7 B0 15.7 15.9 D 1.5 1.6 D1 1.59 1.61 E 1.65 1.85 F ...

Page 13

Figure 23: Revision History Date Revision 29-Jul-2004 1 STP11NM8O - STF11NM80 - STB11NM80 - STW11NM80 Description of Changes Final Document 13/14 ...

Page 14

... No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics ...

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