STW11NK90Z STMicroelectronics, STW11NK90Z Datasheet - Page 5

• Manufacturer Part Number: STW11NK90Z
• Description: MOSFET N-CH 900V 9.2A TO-247
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STW11NK90Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 980 mOhm @ 4.6A, 10V
• Drain To Source Voltage (vdss): 900V
• Current - Continuous Drain (id) @ 25° C: 9.2A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 115nC @ 10V
• Input Capacitance (ciss) @ Vds: 3000pF @ 25V
• Power - Max: 200W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.98 Ohms
• Drain-source Breakdown Voltage: 900 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 9.2 A
• Power Dissipation: 200 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-6198-5

STW11NK90Z
Table 7.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Table 8.
1.
BV
Symbol
Symbol
I
V
SDM
I
I
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
GSO
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
RRM
RRM
I
SD
Q
Q
SD
t
t
rr
rr
rr
rr
(2)
(1)
(1)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Gate-source breakdown
voltage
Source drain diode
Gate-source zener diode
Parameter
Parameter
Igs=±1mA (open drain)
I
I
di/dt = 100A/µs,
V
(see Figure 18)
I
di/dt = 100A/µs,
V
(see Figure 18)
SD
SD
SD
DD
DD
=9.2A, V
=9.2A,
=9.2A,
Test conditions
Test conditions
=50V, Tj=25°C
=50V, Tj=150°C
GS
=0
Electrical characteristics
Min.
30
Min.
Typ.
584
790
Typ.
8.7
21
22
6
Max.
Max.
36.8
9.2
1.6
Unit
Unit
µC
µC
ns
ns
V
A
A
V
A
A
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