STW11NK90Z STMicroelectronics, STW11NK90Z Datasheet - Page 4

• Manufacturer Part Number: STW11NK90Z
• Description: MOSFET N-CH 900V 9.2A TO-247
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STW11NK90Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 980 mOhm @ 4.6A, 10V
• Drain To Source Voltage (vdss): 900V
• Current - Continuous Drain (id) @ 25° C: 9.2A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 115nC @ 10V
• Input Capacitance (ciss) @ Vds: 3000pF @ 25V
• Power - Max: 200W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.98 Ohms
• Drain-source Breakdown Voltage: 900 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 9.2 A
• Power Dissipation: 200 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-6198-5

Electrical characteristics
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4/12
Electrical characteristics
(T
Table 4.
Table 5.
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. C
Table 6.
C
V
Symbol
Symbol
Symbol
R
CASE
V
oss eq
(BR)DSS
g
t
t
C
I
I
inceases from 0 to 80% V
DS(on)
C
C
GS(th)
Q
Q
d(on)
d(off)
DSS
GSS
fs
Q
oss
oss eq.
t
t
rss
iss
gs
gd
r
f
g
(1)
=25°C unless otherwise specified)
(2)
.
is defined as a constant equivalent capacitance giving the same charging time as C
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
Switching times
DS
= 0)
Parameter
Parameter
Parameter
GS
= 0)
DSS
V
R
(see Figure 13)
V
V
V
V
V
(see Figure 14)
I
V
V
V
V
V
D
GS
GS
DD
DS
DS
DD
G
DS
DS
GS
DS
GS
= 1mA, V
=4.7Ω, V
=450 V, I
=0, V
=720V, I
= V
= 10V, I
=15V, I
=25V, f=1 MHz, V
=10V
= Max rating,
= Max rating @125°C
= ±20V
Test conditions
Test conditions
Test conditions
GS
DS
, I
D
D
GS
D
GS
=0V to 720V
D
D
= 4.6A
= 4.6A
= 100µA
= 9.2A
= 4.6A,
= 0
=10V
GS
=0
Min.
Min.
900
Min.
3
Typ.
3.75
0.82
3000
Typ.
Typ.
240
11
48
83
95
14
49
30
19
76
50
oss
STW11NK90Z
Max.
0.98
Max.
Max.
±
4.5
115
when V
50
10
1
DS
Unit
Unit
Unit
µA
µA
µA
nC
nC
nC
pF
pF
pF
pF
ns
ns
ns
ns
V
V
Ω
S