STP11NM60ND STMicroelectronics, STP11NM60ND Datasheet - Page 6

MOSFET N-CH 600V 10A TO-220

STP11NM60ND

Manufacturer Part Number
STP11NM60ND
Description
MOSFET N-CH 600V 10A TO-220
Manufacturer
STMicroelectronics
Series
FDmesh™r
Datasheet

Specifications of STP11NM60ND

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
450 mOhm @ 5A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
10A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
30nC @ 10V
Input Capacitance (ciss) @ Vds
850pF @ 50V
Power - Max
90W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Polarity
N Channel
Continuous Drain Current Id
10A
Drain Source Voltage Vds
600V
On Resistance Rds(on)
0.37ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Configuration
Single
Resistance Drain-source Rds (on)
0.45 Ohm @ 10 V
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
10 A
Power Dissipation
90 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-8442-5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STP11NM60ND
Manufacturer:
ST
Quantity:
20 000
Electrical characteristics
6/19
Table 7.
Table 8.
1. Pulse width limited by safe operating area
2.
Symbol
Symbol
I
SDM
V
t
t
I
I
d(on)
d(off)
Pulsed: pulse duration = 300µs, duty cycle 1.5%
RRM
RRM
SD
I
Q
Q
t
SD
t
t
t
r
rr
rr
f
rr
rr
(2)
(1)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Source drain diode
Parameter
Parameter
Doc ID 14625 Rev 2
V
R
(see
I
I
V
(see
V
di/dt =100 A/µs, I
Tj = 150 °C (see
SD
SD
DD
DD
DD
G
= 4.7 Ω, V
=10 A, di/dt =100 A/µs,
= 10 A, V
= 300 V, I
= 100 V
= 100 V
Figure
Figure
Test conditions
Test conditions
18)
20)
GS
D
GS
=0
= 5 A,
SD
Figure
= 10 V
= 10 A
20)
STD/F/I/P/U11NM60ND
Min
Min
-
-
-
-
-
0.69
Typ
130
200
Typ
1.2
11
12
16
50
7
9
Max
Max Unit
1.3
10
40
-
Unit
µC
µC
ns
ns
ns
ns
ns
ns
A
A
V
A
A

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