STP11NM60ND STMicroelectronics, STP11NM60ND Datasheet - Page 5

• Manufacturer Part Number: STP11NM60ND
• Description: MOSFET N-CH 600V 10A TO-220
• Manufacturer: STMicroelectronics
• Series: FDmesh™r

Specifications of STP11NM60ND

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 450 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 850pF @ 50V
• Power - Max: 90W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 10A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 0.37ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Configuration: Single
• Resistance Drain-source Rds (on): 0.45 Ohm @ 10 V
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 10 A
• Power Dissipation: 90 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-8442-5

STD/F/I/P/U11NM60ND
2
Electrical characteristics
(T
Table 5.
1. Value measured at turn off under inductive load
Table 6.
1.
2. C
C
V
Symbol
Symbol
R
dv/dt
CASE
V
oss eq.
(BR)DSS
g
C
I
increases from 0 to 80% V
I
C
GS(th)
DS(on)
C
Q
Q
Pulsed: pulse duration = 300µs, duty cycle 1.5%
DSS
GSS
Rg
Q
fs
oss eq.
oss
rss
iss
gs
gd
(1)
g
(1)
(2)
= 25 °C unless otherwise specified)
is defined as a constant equivalent capacitance giving the same charging time as C
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Gate input resistance
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source breakdown
voltage
Drain-source voltage slope
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
DS
= 0)
Parameter
Parameter
GS
= 0)
DSS
Doc ID 14625 Rev 2
V
V
V
V
f=1 MHz Gate DC Bias=0
Test signal level=20 mV
open drain
V
V
(see
I
V
V
V
V
V
V
V
D
DS
DS
GS
GS
DD
GS
DD
GS
DS
DS
GS
DS
GS
= 1 mA, V
= V
= 10 V, I
=15 V, I
= 50 V, f =1 MHz,
= 0
= 0, V
= 10 V
= 480 V, I
= max rating,
= ±20 V
= 10 V
= max rating,@125 °C
= 480 V,I
Figure
Test conditions
Test conditions
GS
, I
DS
D
19)
D
GS
D
= 0V to 480 V
D
= 5 A
= 250 µA
D
= 5 A
= 0
= 10 A,
= 10 A
Min.
Min.
Electrical characteristics
600
3
-
-
-
-
-
Typ.
Typ.
0.37
130
850
7.5
3.7
44
30
16
45
5
4
4
oss
Max.
Max.
0.45
100
100
when V
1
5
-
-
-
-
-
DS
Unit
V/ns
Unit
µA
µA
nA
nC
nC
nC
pF
pF
pF
pF
V
V
Ω
S
Ω
5/19