STW20NK50Z STMicroelectronics, STW20NK50Z Datasheet - Page 6

• Manufacturer Part Number: STW20NK50Z
• Description: MOSFET N-CH 500V 17A TO-247
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STW20NK50Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 270 mOhm @ 8.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 119nC @ 10V
• Input Capacitance (ciss) @ Vds: 2600pF @ 25V
• Power - Max: 190W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.27 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 17 A
• Power Dissipation: 190000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Current, Drain: 17 A
• Gate Charge, Total: 85 nC
• Package Type: TO-247
• Polarization: N-Channel
• Resistance, Drain To Source On: 0.23 Ohm
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 70 ns
• Time, Turn-on Delay: 28 ns
• Transconductance, Forward: 13 S
• Voltage, Breakdown, Drain To Source: 500 V
• Voltage, Forward, Diode: 1.6 V
• Voltage, Gate To Source: ±30 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-3261-5

Electrical characteristics
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Table 7.
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. Pulse width limited by safe operating area
Table 8.
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
Symbol
I
Symbol
V
SDM
BV
I
I
RRM
RRM
I
SD
Q
Q
SD
t
t
rr
rr
rr
rr
GSO
(2)
(1)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Gate-source breakdown voltage Igs=± 1mA (open drain)
Source drain diode
Gate-source Zener diode
Parameter
Parameter
Doc ID 9118 Rev 9
I
I
di/dt = 100 A/µs
V
(see
I
di/dt = 100 A/µs
V
(see
SD
SD
SD
R
R
= 100 V
= 100 V, Tj = 150 °C
= 17 A, V
= 17 A,
= 17 A,
Test conditions
Figure
Figure
Test conditions
21)
21)
GS
= 0
Min.
Min.
-
-
-
-
30
Typ.
3.90
5.72
355
440
22
26
Typ.
STx20NK50Z
Max.
Max.
1.6
17
68
Unit
Unit
µC
µC
ns
ns
A
A
V
A
A
V