STW20NK50Z STMicroelectronics, STW20NK50Z Datasheet - Page 3

• Manufacturer Part Number: STW20NK50Z
• Description: MOSFET N-CH 500V 17A TO-247
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STW20NK50Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 270 mOhm @ 8.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 119nC @ 10V
• Input Capacitance (ciss) @ Vds: 2600pF @ 25V
• Power - Max: 190W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.27 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 17 A
• Power Dissipation: 190000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Current, Drain: 17 A
• Gate Charge, Total: 85 nC
• Package Type: TO-247
• Polarization: N-Channel
• Resistance, Drain To Source On: 0.23 Ohm
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 70 ns
• Time, Turn-on Delay: 28 ns
• Transconductance, Forward: 13 S
• Voltage, Breakdown, Drain To Source: 500 V
• Voltage, Forward, Diode: 1.6 V
• Voltage, Gate To Source: ±30 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-3261-5

STx20NK50Z
1
Electrical ratings
Table 2.
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. I
Table 3.
V
Symbol
Symbol
R
dv/dt
R
ESD(G-S)
I
SD
DM
P
V
thj-case
thj-amb
V
V
T
I
I
TOT
T
T
ISO
GS
DS
stg
D
D
l
j
(2)
≤ 17 A, di/dt ≤ 200 A/µs, V
(3)
Absolute maximum ratings
Thermal data
Thermal resistance junction-case max
Thermal resistance junction-ambient
max
Maximum lead temperature for
soldering purpose
Drain-source voltage (V
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating factor
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t = 1 s; T
Gate source ESD (HBM-C=100 pF,
R=1.5 kΩ)
Peak diode recovery voltage slope
Storage temperature
Max operating junction temperature
C
= 25 °C)
Parameter
Parameter
DD
Doc ID 9118 Rev 9
C
= 25 °C
≤ V
GS
(BR)DSS
= 0)
C
C
= 25 °C
= 100 °C
, T
j
≤ T
JMAX.
TO-220,
D²PAK
TO-220, TO-247,
62.5
D²PAK
0.66
10.71
190
17
68
--
-55 to 150
Value
300
TO-247 TO-220FP
Value
6000
± 30
1.51
500
150
4.5
50
TO-220FP
Electrical ratings
10.71
2500
17
68
40
62.5
(1)
3.1
W/°C
Unit
V/ns
°C/W
°C/W
Unit
°C
°C
W
V
V
A
A
A
V
°C
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