STK822 STMicroelectronics, STK822 Datasheet - Page 5

• Manufacturer Part Number: STK822
• Description: MOSFET N-CH 25V 38A POLARPAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STK822

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.15 mOhm @ 19A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 38A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 33nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 6060pF @ 25V
• Power - Max: 5.2W
• Mounting Type: Surface Mount
• Package / Case: PolarPak®
• Configuration: Single Quad Drain Quad Source Dual Gate
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.00215 Ohms
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 38 A
• Power Dissipation: 5.2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-6325-2

STK822
Table 6.
Table 7.
1. Pulse width limited by package
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Symbol
Symbol
I
V
SDM
t
t
I
SD
RRM
d(on)
d(off)
I
Q
SD
t
t
t
rr
r
f
rr
(2)
(1)
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Switching times
Source drain diode
Parameter
Parameter
I
I
V
(see Figure 15)
V
R
(see Figure 16)
V
R
(see Figure 16)
SD
SD
DD
DD
DD
G
G
= 19 A, V
= 38 A, di/dt = 100 A/µs,
= 4.7 Ω, V
= 4.7 Ω, V
= 20 V, Tj = 150 °C
= 12.5 V, I
=15 V, I
Test conditions
Test conditions
D
GS
= 19 A,
GS
GS
D
=0
= 19 A,
= 4.5 V
= 4.5 V
Electrical characteristics
Min.
Min.
Typ.
Typ.
30.7
43.5
2.2
41
45
60
13
Max.
Max.
152
1.2
38
Unit
Unit
nC
ns
ns
ns
ns
ns
A
A
V
A
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