STK822 STMicroelectronics, STK822 Datasheet - Page 4

• Manufacturer Part Number: STK822
• Description: MOSFET N-CH 25V 38A POLARPAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STK822

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.15 mOhm @ 19A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 38A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 33nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 6060pF @ 25V
• Power - Max: 5.2W
• Mounting Type: Surface Mount
• Package / Case: PolarPak®
• Configuration: Single Quad Drain Quad Source Dual Gate
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.00215 Ohms
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 38 A
• Power Dissipation: 5.2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-6325-2

Electrical characteristics
2
4/15
Electrical characteristics
(T
Table 4.
Table 5.
V
Symbol
Symbol
R
CASE
V
(BR)DSS
Q
Q
I
I
C
DS(on)
C
GS(th)
C
Q
Q
DSS
GSS
R
Q
oss
gs1
gs2
iss
rss
gs
gd
G
g
=25 °C unless otherwise specified)
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Pre V
charge
Post V
charge
Gate input resistance
Dynamic
On/off
DS
= 0)
th
th
gate-to-source
Parameter
Parameter
gate-to-source
GS
= 0)
I
V
V
V
V
V
V
V
V
V
(see Figure 14)
V
V
(see Figure 19)
f=1 MHz Gate DC Bias = 0
Test signal level = 20 mV
open drain
D
GS
GS
GS
DS
DS
DS
GS
GS
DS
DD
DD
= 1 mA, V
= V
= 10 V, I
= 4.5 V, I
=12.5 V, I
=12.5 V, I
= 20 V
= 20 V, Tc = 125 °C
= ±16 V
= 25 V, f=1 MHz, V
= 4.5 V
= 4.5 V
Test conditions
Test conditions
GS
, I
D
D
GS
D
= 19 A
= 250 µA
D
D
= 19 A
= 0
= 38 A
= 12 A
GS
=0
Min.
25
1
Min.
0.00175
0.0022
Typ.
6060
1366
Typ.
13.2
11.3
136
5.2
1.1
33
8
0.00215
0.003
Max.
±
Max. Unit
2.5
100
10
1
STK822
Unit
nC
nC
nC
nC
nC
pF
pF
pF
µA
µA
nA
Ω
V
V
Ω
Ω