IRF7832TR International Rectifier, IRF7832TR Datasheet - Page 6

• Manufacturer Part Number: IRF7832TR
• Description: MOSFET N-CH 30V 20A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7832TR

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 2.32V @ 250µA
• Gate Charge (qg) @ Vgs: 51nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 4310pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IRF7832
6
R G
20V
VGS
Fig 14. Unclamped Inductive Test Circuit
V DS
Fig 12. On-Resistance vs. Gate Voltage
10
Fig 16. Switching Time Test Circuit
t p
8
6
4
2
0
I AS
2
D.U.T
0.01 Ω
L
3
V GS , Gate -to -Source Voltage (V)
Duty Factor < 0.1%
Pulse Width < 1µs
V
GS
and Waveform
15V
4
DRIVER
V
DS
+
5
- V DD
A
6
I
AS
T J = 125°C
T J = 25°C
D.U.T
7
L
D
V
DD
8
I D = 20A
+
t p
-
9
10
V
(BR)DSS
90%
V
10%
600
500
400
300
200
100
V
DS
Fig 17. Switching Time Waveforms
GS
0
25
Fig 13. Maximum Avalanche Energy
Fig 15. Gate Charge Test Circuit
t
Starting T J , Junction Temperature (°C)
12V
d(on)
V
GS
50
Same Type as D.U.T.
Current Regulator
.2µF
t
vs. Drain Current
r
50KΩ
3mA
75
Current Sampling Resistors
.3µF
I
G
t
d(off)
100
TOP
BOTTOM 16A
D.U.T.
www.irf.com
I
D
t
f
125
+
-
V
I D
7.0A
13A
DS
150