IRF7832TR International Rectifier, IRF7832TR Datasheet - Page 4
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IRF7832TR
Manufacturer Part Number
IRF7832TR
Description
MOSFET N-CH 30V 20A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF7832TR.pdf
(10 pages)
Specifications of IRF7832TR
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
4 mOhm @ 20A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
20A
Vgs(th) (max) @ Id
2.32V @ 250µA
Gate Charge (qg) @ Vgs
51nC @ 4.5V
Input Capacitance (ciss) @ Vds
4310pF @ 15V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF7832TRPBF
Manufacturer:
IR
Quantity:
3 533
Part Number:
IRF7832TRPBF
Manufacturer:
IR
Quantity:
20 000
IRF7832
100000
10000
4
1000
1000
100
100
0.1
10
1
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
1
0.0
Drain-to-Source Voltage
T J = 150°C
0.2
V DS , Drain-to-Source Voltage (V)
V SD , Source-to-Drain Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Forward Voltage
0.4
0.6
f = 1 MHZ
10
0.8
T J = 25°C
1.0
1.2
V GS = 0V
C iss
C rss
C oss
1.4
1.6
100
1000
100
10
6
5
4
3
2
1
0
Fig 8. Maximum Safe Operating Area
1
0
1
Fig 6. Typical Gate Charge Vs.
Tc = 25°C
Tj = 150°C
Single Pulse
I D = 16A
Gate-to-Source Voltage
V DS , Drain-to-Source Voltage (V)
10
Q G Total Gate Charge (nC)
V DS = 24V
V DS = 15V
20
10
30
www.irf.com
100µsec
10msec
1msec
40
100
50