IRF7832TR International Rectifier, IRF7832TR Datasheet - Page 4

• Manufacturer Part Number: IRF7832TR
• Description: MOSFET N-CH 30V 20A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7832TR

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 2.32V @ 250µA
• Gate Charge (qg) @ Vgs: 51nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 4310pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IRF7832
100000
10000
4
1000
1000
100
100
0.1
10
1
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
1
0.0
Drain-to-Source Voltage
T J = 150°C
0.2
V DS , Drain-to-Source Voltage (V)
V SD , Source-to-Drain Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Forward Voltage
0.4
0.6
f = 1 MHZ
10
0.8
T J = 25°C
1.0
1.2
V GS = 0V
C iss
C rss
C oss
1.4
1.6
100
1000
100
10
6
5
4
3
2
1
0
Fig 8. Maximum Safe Operating Area
1
0
1
Fig 6. Typical Gate Charge Vs.
Tc = 25°C
Tj = 150°C
Single Pulse
I D = 16A
Gate-to-Source Voltage
V DS , Drain-to-Source Voltage (V)
10
Q G Total Gate Charge (nC)
V DS = 24V
V DS = 15V
20
10
30
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100µsec
10msec
1msec
40
100
50