IRF7832TR International Rectifier, IRF7832TR Datasheet

MOSFET N-CH 30V 20A 8-SOIC

IRF7832TR

Manufacturer Part Number
IRF7832TR
Description
MOSFET N-CH 30V 20A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF7832TR

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
4 mOhm @ 20A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
20A
Vgs(th) (max) @ Id
2.32V @ 250µA
Gate Charge (qg) @ Vgs
51nC @ 4.5V
Input Capacitance (ciss) @ Vds
4310pF @ 15V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

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Applications
l
l
Benefits
l
l
l
l
l
www.irf.com
Notes  through
V
V
I
I
I
P
P
T
T
R
R
Absolute Maximum Ratings
Thermal Resistance
D
D
DM
J
STG
DS
GS
D
D
θJL
θJA
@ T
@ T
Synchronous MOSFET for Notebook
Processor Power
Synchronous Rectifier MOSFET for
Isolated DC-DC Converters in
Networking Systems
and Current
Very Low R
Ultra-Low Gate Impedance
Fully Characterized Avalanche Voltage
20V V
100% tested for Rg
@T
@T
A
A
A
A
= 25°C
= 70°C
= 25°C
= 70°C
GS
Max. Gate Rating
DS(on)
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Junction-to-Drain Lead
Junction-to-Ambient
are on page 10
at 4.5V V
Parameter
Parameter
GS
f
GS
GS
@ 10V
@ 10V
V
30V
DSS
G
S
S
S
1
2
3
4
Top View
4.0m @V
Typ.
–––
–––
R
DS(on)
-55 to + 155
HEXFET Power MOSFET
8
6
5
7
Max.
0.02
± 20
160
2.5
1.6
30
20
16
D
D
D
A
D
A
GS
max
Max.
= 10V 34nC
IRF7832
20
50
SO-8
Qg
Units
Units
W/°C
°C/W
°C
06/30/05
W
V
A
1

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IRF7832TR Summary of contents

Page 1

Applications Synchronous MOSFET for Notebook l Processor Power Synchronous Rectifier MOSFET for l Isolated DC-DC Converters in Networking Systems Benefits Very Low DS(on) Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage l and Current 20V ...

Page 2

IRF7832 Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V Gate Threshold Voltage Coefficient GS(th) ...

Page 3

PULSE WIDTH Tj = 25°C 0.01 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 100 150° 25° ...

Page 4

IRF7832 100000 0V MHZ C iss = SHORTED C rss = oss = 10000 1000 100 1 10 ...

Page 5

Case Temperature (°C) Fig 9. Maximum Drain Current Vs. Case Temperature 100 D = 0.50 10 0.20 0.10 0.05 0.02 1 0.01 0.1 SINGLE PULSE ( ...

Page 6

IRF7832 125° 25° Gate -to -Source Voltage (V) Fig 12. On-Resistance vs. Gate Voltage 15V L DRIVER ...

Page 7

D.U.T + ƒ • • - • + ‚ -  R • • • SD • Fig 18. Vds Vgs(th) Qgs1 Qgs2 www.irf.com Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery „ Current - + D.U.T. V ...

Page 8

IRF7832 Power MOSFET Selection for Non-Isolated DC/DC Converters Control FET loss conduction switching drive This can be expanded and approximated by × loss rms ds(on ) ...

Page 9

SO-8 Package Details & " YÃi !$Ãb dà IPU@T) ÃÃ9DH@ITDPIDIBÃÉÃUPG@S6I8DIBÃQ@SÃ6TH@Ã` #$H ((# !ÃÃ8PIUSPGGDIBÃ9DH@ITDPI)ÃHDGGDH@U@S "ÃÃ9DH@ITDPITÃ6S@ÃTCPXIÃDIÃHDGGDH@U@STÃbDI8C@Td #ÃÃPVUGDI@Ã8PI PSHTÃUPÃE@9@8ÃPVUGDI@ÃHT !66 $ÃÃÃ9DH@ITDPIÃ9P@TÃIPUÃDI8GV9@ÃHPG9ÃQSPUSVTDPIT ÃÃÃÃÃHPG9ÃQSPUSVTDPITÃIPUÃUPÃ@Y8@@9Ã $Ãb%d %ÃÃÃ9DH@ITDPIÃ9P@TÃIPUÃDI8GV9@ÃHPG9ÃQSPUSVTDPIT ÃÃÃÃÃHPG9ÃQSPUSVTDPITÃIPUÃUPÃ@Y8@@9Ã!$Ãb d &ÃÃÃ9DH@ITDPIÃDTÃUC@ÃG@IBUCÃP ...

Page 10

IRF7832 SO-8 Tape and Reel NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Notes: ...

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