IRF630NLPBF International Rectifier, IRF630NLPBF Datasheet - Page 7
![MOSFET N-CH 200V 9.3A TO-262](/photos/5/32/53250/to-262_sml.jpg)
IRF630NLPBF
Manufacturer Part Number
IRF630NLPBF
Description
MOSFET N-CH 200V 9.3A TO-262
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF630NPBF.pdf
(11 pages)
Specifications of IRF630NLPBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
300 mOhm @ 5.4A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
9.3A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
35nC @ 10V
Input Capacitance (ciss) @ Vds
575pF @ 25V
Power - Max
82W
Mounting Type
Through Hole
Package / Case
TO-262-3 (Straight Leads)
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
9.5 A
Power Dissipation
82 W
Mounting Style
Through Hole
Gate Charge Qg
23.3 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRF630NLPBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF630NLPBF
Manufacturer:
CREE
Quantity:
10 000
www.irf.com
Re-Applied
Voltage
Reverse
Recovery
Current
+
-
D.U.T
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
For N-Channel HEXFET
P.W.
SD
DS
Waveform
Waveform
Ripple ≤ 5%
Body Diode
Period
Body Diode Forward
+
-
•
•
•
•
Diode Recovery
Current
dv/dt
Forward Drop
•
•
•
di/dt
®
Power MOSFETs
D =
-
Period
P.W.
+
V
V
I
SD
GS
DD
=10V
+
-
IRF630N/S/LPbF
7