IRF630NLPBF International Rectifier, IRF630NLPBF Datasheet - Page 4
![MOSFET N-CH 200V 9.3A TO-262](/photos/5/32/53250/to-262_sml.jpg)
IRF630NLPBF
Manufacturer Part Number
IRF630NLPBF
Description
MOSFET N-CH 200V 9.3A TO-262
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF630NPBF.pdf
(11 pages)
Specifications of IRF630NLPBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
300 mOhm @ 5.4A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
9.3A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
35nC @ 10V
Input Capacitance (ciss) @ Vds
575pF @ 25V
Power - Max
82W
Mounting Type
Through Hole
Package / Case
TO-262-3 (Straight Leads)
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
9.5 A
Power Dissipation
82 W
Mounting Style
Through Hole
Gate Charge Qg
23.3 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRF630NLPBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF630NLPBF
Manufacturer:
CREE
Quantity:
10 000
IRF630N/S/LPbF
www.irf.com
100
1200
1000
0.1
800
600
400
200
10
1
0
0.2
1
T = 175 C
V
J
Coss
Crss
Ciss
SD
0.4
V DS , Drain-to-Source Voltage (V)
,Source-to-Drain Voltage (V)
°
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
10
0.6
0.8
f = 1 MHZ
100
T = 25 C
J
V
1.0
GS
°
= 0 V
1000
1.2
1000
100
0.1
10
1
16
12
1
8
4
0
T
T
Single Pulse
0
C
J
I =
D
= 25 C °
= 175 C
OPERATION IN THIS AREA LIMITED
V
5.4A
DS
5
°
Q , Total Gate Charge (nC)
, Drain-to-Source Voltage (V)
G
10
10
BY R
V
V
V
DS(on)
15
DS
DS
DS
= 160V
= 100V
= 40V
100
20
10us
100us
1ms
10ms
25
4
1000
30