IRF630NLPBF International Rectifier, IRF630NLPBF Datasheet - Page 5

• Manufacturer Part Number: IRF630NLPBF
• Description: MOSFET N-CH 200V 9.3A TO-262
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF630NLPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 300 mOhm @ 5.4A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 9.3A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 35nC @ 10V
• Input Capacitance (ciss) @ Vds: 575pF @ 25V
• Power - Max: 82W
• Mounting Type: Through Hole
• Package / Case: TO-262-3 (Straight Leads)
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 9.5 A
• Power Dissipation: 82 W
• Mounting Style: Through Hole
• Gate Charge Qg: 23.3 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF630NLPBF

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12
0.01
9
6
3
0
0.1
0.00001
10
12
25
1
9
6
3
0
25
D = 0.50
0.20
0.10
0.05
0.02
0.01
50
50
T , Case Temperature ( C)
C
T , Case Temperature ( C)
C
75
75
(THERMAL RESPONSE)
0.0001
100
SINGLE PULSE
100
125
125
°
150
°
t , Rectangular Pulse Duration (sec)
1
150
0.001
175
175
V
V
90%
90%
10%
10%
V
V
0.01
DS
DS
GS
GS
1. Duty factor D = t / t
2. Peak T = P
t
t
Notes:
d(on)
d(on)
≤ 0.1 %
≤ 0.1 %
≤ 1
≤ 1
t
t
r
r
J
IRF630N/S/LPbF
DM
x Z
1
0.1
thJC
P
2
DM
+ T
t
t
d(off)
d(off)
C
t
1
t
t
t
2
f
f
+
-
5
1