IRF9530NPBF International Rectifier, IRF9530NPBF Datasheet - Page 4

MOSFET P-CH 100V 14A TO-220AB

IRF9530NPBF

Manufacturer Part Number
IRF9530NPBF
Description
MOSFET P-CH 100V 14A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheets

Specifications of IRF9530NPBF

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
200 mOhm @ 8.4A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
14A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
58nC @ 10V
Input Capacitance (ciss) @ Vds
760pF @ 25V
Power - Max
79W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Channel Type
P
Current, Drain
-14 A
Gate Charge, Total
58 nC
Package Type
TO-220AB
Polarization
P-Channel
Power Dissipation
79 W
Resistance, Drain To Source On
0.2 Ohm
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
45 ns
Time, Turn-on Delay
15 ns
Transconductance, Forward
3.2 S
Voltage, Breakdown, Drain To Source
-100 V
Voltage, Drain To Source
–100 V
Voltage, Forward, Diode
-1.6 V
Voltage, Gate To Source
±20 V
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
- 100 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
- 14 A
Mounting Style
Through Hole
Gate Charge Qg
38.7 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRF9530NPBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF9530NPBF
Manufacturer:
IR
Quantity:
15 600
Part Number:
IRF9530NPBF
Manufacturer:
IR
Quantity:
421
Part Number:
IRF9530NPBF
Manufacturer:
IR
Quantity:
8 000
Part Number:
IRF9530NPBF
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRF9530NPBF
0
Company:
Part Number:
IRF9530NPBF
Quantity:
15 000
Company:
Part Number:
IRF9530NPBF
Quantity:
30 000
100
2000
1600
1200
0.1
10
800
400
1
0.4
0
1
T = 150°C
J
-V
0.6
-V
SD
DS
, Source-to-Drain Voltage (V)
V
C
C
C
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
0.8
C
C
C
rss
iss
oss
= 0V,
= C
= C
= C
T = 25°C
gs
ds
gd
J
1.0
+ C
+ C
10
gd
gd
f = 1MHz
, C
1.2
ds
SHORTED
V
1.4
GS
= 0V
1.6
100
A
A
1000
100
20
15
10
10
5
0
1
0
1
I =
D
T
T
Single Pulse
C
J
= 25 C
= 175 C
-8.4A
OPERATION IN THIS AREA LIMITED
-V
10
DS
Q , Total Gate Charge (nC)
°
°
G
, Drain-to-Source Voltage (V)
20
10
BY R
V
V
V
30
DS
DS
DS
DS(on)
FOR TEST CIRCUIT
=-80V
=-50V
=-20V
SEE FIGURE
40
100
10us
100us
1ms
10ms
50
13
1000
60

Related parts for IRF9530NPBF