IRF9530NPBF International Rectifier, IRF9530NPBF Datasheet

MOSFET P-CH 100V 14A TO-220AB

IRF9530NPBF

Manufacturer Part Number
IRF9530NPBF
Description
MOSFET P-CH 100V 14A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheets

Specifications of IRF9530NPBF

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
200 mOhm @ 8.4A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
14A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
58nC @ 10V
Input Capacitance (ciss) @ Vds
760pF @ 25V
Power - Max
79W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Channel Type
P
Current, Drain
-14 A
Gate Charge, Total
58 nC
Package Type
TO-220AB
Polarization
P-Channel
Power Dissipation
79 W
Resistance, Drain To Source On
0.2 Ohm
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
45 ns
Time, Turn-on Delay
15 ns
Transconductance, Forward
3.2 S
Voltage, Breakdown, Drain To Source
-100 V
Voltage, Drain To Source
–100 V
Voltage, Forward, Diode
-1.6 V
Voltage, Gate To Source
±20 V
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
- 100 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
- 14 A
Mounting Style
Through Hole
Gate Charge Qg
38.7 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRF9530NPBF

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IRF9530NPBF Summary of contents

Page 1

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Page 2

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Page 3

Dimensions are shown in millimeters (inches) 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584) 1.15 (.045 14.09 (.555) 4.06 (.160) 13.47 (.530) 3.55 (.140) 0.93 (.037) 3X 0.69 ...

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