IRF9530NPBF International Rectifier, IRF9530NPBF Datasheet - Page 3

• Manufacturer Part Number: IRF9530NPBF
• Description: MOSFET P-CH 100V 14A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF9530NPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 200 mOhm @ 8.4A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 58nC @ 10V
• Input Capacitance (ciss) @ Vds: 760pF @ 25V
• Power - Max: 79W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Channel Type: P
• Current, Drain: -14 A
• Gate Charge, Total: 58 nC
• Package Type: TO-220AB
• Polarization: P-Channel
• Power Dissipation: 79 W
• Resistance, Drain To Source On: 0.2 Ohm
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 45 ns
• Time, Turn-on Delay: 15 ns
• Transconductance, Forward: 3.2 S
• Voltage, Breakdown, Drain To Source: -100 V
• Voltage, Drain To Source: –100 V
• Voltage, Forward, Diode: -1.6 V
• Voltage, Gate To Source: ±20 V
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 14 A
• Mounting Style: Through Hole
• Gate Charge Qg: 38.7 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF9530NPBF

100
0.1
100
10
0.1
10
1
1
0.1
4
TOP
BOTTOM - 4.5V
-V
-V
5
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
GS
VGS
DS
, Gate-to-Source Voltage (V)
T = 25°C
, Drain-to-Source Voltage (V)
J
6
1
7
T = 175°C
J
V
20µs PULSE WIDTH
-4.5V
20µs PULSE WIDTH
T = 25°C
DS
c
= -50V
10
8
9
100
10
A
A
100
0.1
2.5
2.0
1.5
1.0
0.5
0.0
10
1
0.1
-60 -40 -20 0
TOP
BOTTOM - 4.5V
I =
D
-14A
-V
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
T , Junction Temperature ( C)
VGS
DS
J
, Drain-to-Source Voltage (V)
1
20 40 60 80 100 120 140 160 180
20µs PULSE WIDTH
T = 175°C
-4.5V
C
10
V
°
GS
=
-10V
100
A