STB10NK60ZT4 STMicroelectronics, STB10NK60ZT4 Datasheet - Page 9

• Manufacturer Part Number: STB10NK60ZT4
• Description: MOSFET N-CH 600V 10A D2PAK
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STB10NK60ZT4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 750 mOhm @ 4.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 70nC @ 10V
• Input Capacitance (ciss) @ Vds: 1370pF @ 25V
• Power - Max: 115W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 4.5A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 650mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3.75V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.75 Ohms
• Forward Transconductance Gfs (max / Min): 7.8 S
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 10 A
• Power Dissipation: 115 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-6544-2; STB10NK60ZT4

STB10NK60Z, STP10NK60Z, STW10NK60Z
Figure 14. Normalized gate threshold voltage
Figure 16. Source-drain diode forward
Figure 18. Normalized B
vs temperature
characteristics
VDSS
vs temperature
Figure 15. Normalized on resistance vs
Figure 17. Maximum avalanche energy vs
temperature
temperature
Electrical characteristics
9/19