STB10NK60ZT4 STMicroelectronics, STB10NK60ZT4 Datasheet - Page 3

• Manufacturer Part Number: STB10NK60ZT4
• Description: MOSFET N-CH 600V 10A D2PAK
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STB10NK60ZT4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 750 mOhm @ 4.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 70nC @ 10V
• Input Capacitance (ciss) @ Vds: 1370pF @ 25V
• Power - Max: 115W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 4.5A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 650mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3.75V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.75 Ohms
• Forward Transconductance Gfs (max / Min): 7.8 S
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 10 A
• Power Dissipation: 115 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-6544-2; STB10NK60ZT4

STB10NK60Z, STP10NK60Z, STW10NK60Z
1
Electrical ratings
Table 2.
1. Limited only by maximum temperature allowed
2.
3. I
Table 3.
Vesd(G-S) G-S ESD (HBM C=100 pF, R=1.5 kΩ)
Symbol
R
R
Symbol
dv/dt
R
I
thj-case
thj-amb
DM
P
V
thj-pcb
V
V
T
Pulse width limited by safe operating area
SD
T
I
I
TOT
T
ISO
GS
DS
stg
D
D
l
j
(2)
(3)
< 10A, di/dt < 200A/µs, V
Thermal resistance junction-case Max
Thermal resistance junction-pcb Max
(when mounted on minimum footprint)
Thermal resistance junction-amb Max
Maximum lead temperature for soldering
purpose
Drain-source voltage (V
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating factor
Peak diode recovery voltage slope
Insulation withstand voltage (RMS) from
all three
(t=1 s;T
Operating junction temperature
Storage temperature
Absolute maximum ratings
Thermal data
C
leads to external heat sink
=25 °C)
Parameter
Parameter
DD
C
= 25 °C
=80% V
GS
= 0)
(BR)DSS
C
C
= 25 °C
= 100 °C
TO-220
D²PAK,I²PAK
I²PAK
TO-220
0.92
115
5.7
10
36
1.09
--
D²PAK TO-220FP TO-247
60
62.5
-55 to 150
Value
Value
TO-220FP TO-247
4000
± 30
600
300
4.5
5.7
36
2500
10
0.28
35
(1)
(1)
3.6
(1)
Electrical ratings
1.25
156
5.7
10
36
--
0.8
50
W/°C
V/ns
Unit
°C/W
°C/W
°C/W
Unit
°C
W
V
V
A
A
A
V
V
°C
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